Abstract:Ba0.7Sr0.3TiO3 (BST30) thin films, deposited on single crystal Si (100) substrates with or without a MgO(001) buffer layer by the sol-gel method, have been investigated for their optical properties with a visible reflection spectrophotometer. An improved simplex numerical optimization method based on the reflectance spectra fitting is utilized to obtain the refractive indices and thicknesses of the thin films. Two models for the refractive index variations of the films (with or without a MgO buffer layer) together with a resemble double-layer structure are used to describe the films. The crystallization and microstructure of the films are characterized by the field emission scanning electron microscopy, which indicates that the MgO(001) buffer layer can significantly hold up the interdiffusion between the BST30 layer and the Si substrate, acuminate the interfaces, and improve the crystallinity of the BST thin film deposited on it. Furthermore, due to the large difference between the refractive index of the BST30 thin film and that of the MgO(001) buffer layer, which results in a strong beam confinement, a desirable waveguide structure could be constructed. (C) 2009 American Institute of Physics. [doi:10.1063/1.3232225]

Strategic Measurement for the Axis Orientation and Electro-Optic Coefficient of BaTiO3 Crystal Thin Film Grown on MgO Crystal with Polarization Modulations

Correction: Chen et al., Orbital Angular Momentum Generation and Detection by Geometric-Phase Based Metasurfaces. Appl. Sci. 2018, 8, 362

Polarization-Sensitive Perfect Absorbers At Near-Infrared Wavelengths: Erratum (Vol 21, Pg A111, 2013)

Erratum: “A complete set of material properties of single domain 0.26Pb(In1/2Nb1/2)O3–0.46Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 single crystals” [Appl. Phys. Lett. 96, 012907 (2010)]

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Ultralow-threshold Thin-Film Lithium Niobate Optical Parametric Oscillator: Erratum

Author Correction: Ultra-thin high-efficiency mid-infraredtransmissive Huygens meta-optics

Correction: Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Correction: Two-dimensional Polar Metal of a PbTe Monolayer by Electrostatic Doping.

Enhancement of Nonreciprocal Phase Shift by Using Nanoscale Air Gap: Erratum

Erratum: Thermal analysis of injectable, cellular scale optoelectronics with pulsed power (Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences …

Erratum: Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Dynamic pressure surface deformation measurement based on a chromatic confocal sensor: erratum

Determination Of Refractive Indices And Thicknesses Of Ba0.7sr0.3tio3 Films With And Without Mgo (001) Buffer Layer On Silicon Substrate

Correction: BaTiO3–BiYbO3 Perovskite Materials for Energy Storage Applications

Erratum: "A Complete Set of Material Properties of Single Domain 0.26Pb(in(12)nb(12))o(3)-0.46Pb(mg(13)nb(23))o(3)-0.28pbtio(3) Single Crystals" [appl. Phys. Lett. 96, 012907 (2010)].

Thermal, structural, and optical properties of Cleartran® multispectral zinc sulfide (Erratum)

Comments on the erroneous calculations presented in the paper on "Dielectric and impedance spectroscopy of barium orthovanadate ceramics, J. Mater. Sci.: Mater. Electron. 24, 1608 (2013)"

Correction: Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations

Corrigendum: "Reliability of piezoelectric films for MEMS" [Jpn. J. Appl. Phys. 62, SM0802 ]

Corrections to “optical Design of Distributed Feedback Lasers-on-Thin-Film-Silicon” [may 15 2013 944-947]