Abstract:First-principles calculations have been carried out to study effects of BiGa heteroantisite defects in GaAs:Bi on the related electronic structures. Our results show that the heteroantisite defect BiGa can be formed after the isovalent impurity BiAs reaches the solubility limit. This BiGa defect is a deep level donor, and the related defect band is composed of 6s state of BiGa hybridized with 4p states of the nearest As atoms. It is also found that the bandgap of GaAs:Bi alloy varies slightly with the increase of Bi compositions, as well as the relative position of the defect level. The co-existing, especially when BiGa and BiAs stay in the first-nearest neighbor, counteract the reduction of the bandgap caused by isovalent impurities BiAs in GaAs:Bi alloy. These results suggest that heteroantisite defect BiGa does not contribute to the reduction of the bandgap of GaAs:Bi alloy, and might be not an ideal candidate for the bandgap engineering of GaAs:Bi alloy.

Correction: Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface

Effects of Ga-Te Interface Layer on the Potential Barrier Height of CdTe/GaAs Heterointerface.

Correction: Two-dimensional Polar Metal of a PbTe Monolayer by Electrostatic Doping.

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

Correction: Gate-tunable interfacial properties of in-plane ML MX<sub>2</sub> 1T′–2H heterojunctions

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

Correction to "A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces"

Correction: Computational and experimental investigation of TmAgTe2 and XYZ2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening

Correction: High-pressure structural phase transition and metallization in Ga2S3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa

Two-dimensional polar metal of a PbTe monolayer by electrostatic doping (vol 5, pg 1400, 2020)

Correction: Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers

Correction: Enhancement of charge photo-generation and transport via an internal network of Sb2Se3/Cu2GeSe3 heterojunctions

Experimental determination of valence band offset at PbTe/Ge(1 0 0) interface by synchrotron radiation photoelectron spectroscopy

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′-2H heterojunctions (Journal of Materials Chemistry C (2018) DOI: 10.1039/c8tc01106k)

Correction: Direct ink writing of high-performance Bi2Te3-based thermoelectric materials using quasi-inorganic inks and interface engineering

Experimental Determination of Valence Band Offset at Pbte/Ge(100) Interface by Synchrotron Radiation Photoelectron Spectroscopy

Correction: Structural, electronic, optical, elastic, thermodynamic and thermal transport properties of Cs 2 AgInCl 6 and Cs 2 AgSbCl 6 double perovskite semiconductors using a first-principles study

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Correction to "Layered Semiconductor Cr 0.32 Ga 0.68 Te 2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate"

Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]