Design and Analysis of a Novel Low RF MEMS Switch with Low Pull-in Voltage and High Capacitance Ratio

Zhongliang Deng,Chengqi Lai,Jiali Zhou,Yucheng Wang
DOI: https://doi.org/10.1007/s00542-023-05459-0
2023-01-01
Microsystem Technologies
Abstract:This paper designs and analyzes a novel RF MEMS capacitive switch with a high on/off capacitance ratio and low pull-in voltage. Compared with general capacitive RF MEMS switches, the switch adopts a new type of spring support structure, which reduces the spring coefficient of elasticity and forms a low pull-in voltage. By adding an H-shaped floating metal layer above the switch dielectric layer, the on/off capacitance ratio is improved without affecting the predetermined structure of the switch and without thin dielectrics or high dielectric constant materials. Finally, the pull-in voltage of the switch is 4.4 V, and the switching time is 22 μs. When the switch operates at 27 GHz, the isolation of the switch is – 50 dB, the insertion loss is − 0.2 dB, and the switch capacitance ratio is 89. The designed switch shows good working performance.
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