Abstract:The GaN high electron mobility transistor(HEMT)has been considered as a potential terahertz(THz)radiation source,yet the low radiation power level restricts their applications.The HEMT array is thought to improve the coupling efficiency between two-dimensional(2D)plasmons and THz radiation.In this work,we investigate the plasma oscillation,electromagnetic radiation,and the integration characteristics of GaN HEMT targeting at a high THz radiation power source.The quantitative radiation power and directivity are obtained for integrated GaN HEMT array with different array periods and element numbers.With the same initial plasma oscillation phase among the HEMT units,the radiation power of the two-element HEMT array can achieve 4 times as the single HEMT radiation power when the array period is shorter than 1/8 electromagnetic wavelength.In addition,the radiation power of the HEMT array varies almost linearly with the element number,the smaller array period can lead to the greater radiation power.It shows that increasing the array period could narrow the main radiated lobe width while weaken the radiation power.Increasing the element number can improve both the radiation directivity and power.We also synchronize the plasma wave phases in the HEMT array by adopting an external Gaussian plane wave with central frequency the same as the plasmon resonant frequency,which solves the problem of the radiation power reduction caused by the asynchronous plasma oscillation phases among the elements.The study of the radiation power amplification of the one-dimensional(1D)GaN HEMT array provides useful guidance for the research of compact high-power solid-state terahertz sources.

Numerical Calculation of THz Emission of a GaN HEMT Using Coupled Hydrodynamic-Maxwell Equations

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Numerical Study on THz Radiation of Two-Dimensional Plasmon Resonance of GaN HEMT Array

High Speed Transient Thermal Simulation of GaN HEMT Devices

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Study of Two-dimensional Plasmon Resonance of a Grating Gate HEMT

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Acoustic and optical plasmons excitation in double-channel AlGaN/GaN HEMT under asymmetric boundaries

Nonlinear Thermal Analysis of AlGaN/GaN HEMTs With Temperature-Dependent Parameters

Thermal spreading resistance of GaN HEMTs with heat source heating studied by hybrid Monte Carlo-diffusion simulations

Plasmonic Spectrum and Resonance of Grating-gate GaN/AlGaN HEMTs

Numerical Simulation of AlXGa1-XN/AlN/GaN HEMT

A Semi-Analytical and Semi-Numerical Method for Solving Plasma Instability of Nonuniform Two-Dimensional Electron Gas