Abstract:Liquid silanes can be used for low-cost, fast deposition of hydrogenated amorphous silicon (a-Si:H) as an alternative to state-of-the-art deposition processes such as plasma enhanced chemical vapor deposition or electron beam evaporation. However, liquid silane deposition techniques are still in their infancy. In this paper, we present a new version of the atmospheric pressure chemical vapor deposition technique designed to improve the reproducibility of a-Si:H deposition. With this new tool, we explore ways to improve the quality of the material. The films can be prepared using pure trisilane as a precursor; frequently, however, the trisilane is diluted with cyclooctane for better handling and process control. Currently, the influence of this dilution on the film quality is not well understood. In our work, we investigate and compare both precursor strategies. This paper presents a comprehensive analysis of the effects of cyclooctane dilution, deposition temperature, process duration, and precursor amount on the structure stoichiometry and electronic properties of the resulting films. The analysis was performed using a range of techniques, including Fourier transform infrared spectroscopy, electronic spin resonance spectroscopy, ellipsometry, secondary ion mass spectrometry, and conductivity measurements. For films deposited with pure silane, we found a low oxygen (O) and carbon (C) impurity incorporation and an adjustable H content up to 10 %, resulting in a photosensitivity of up to 104. Dependent on the dilution and deposition temperature, the films deposited with cyclooctane dilution showed a various amount of C incorporation, culminating in an a-Si:H/a-SiC:H structure for high temperatures and dilutions. High purity a-Si:H films as a-Si:C:H films are promising for an application in solar cells and transistors either as an amorphous functional layer or as a precursor for recrystallization processes, e.g., in TOPCon solar cell technology.

4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Epitaxial trench refill of 4H-SiC by chlorinated chemistry

Microscale pattern etch of 4H–SiC by inductively coupled plasma

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Conformal and Stoichiometric Chemical Vapor Deposition of Silicon Carbide onto Ultradeep Heterogeneous Micropores by Controlling the Initial Nucleation Stage

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Advanced atmospheric pressure CVD of a-Si:H using pure and cyclooctane-diluted trisilane as precursor

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

Study on the High Speed Chemical Vapor Deposition for SiC Coating

Hydrogen etching of 4H–SiC(0001) facet and step formation