Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Epitaxial trench refill of 4H-SiC by chlorinated chemistry

4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma

Microscale pattern etch of 4H–SiC by inductively coupled plasma

Performance Analysis of 4H-Sic Super-Junction Devices: Impact of Trench Angle and Improvement with Multi-Epi Structure

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition

A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

Effect of process parameters on sidewall damage in deep silicon etch

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices