Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

Extended study of the atomic step-terrace structure on hexagonal SiC (0 0 0 1) by chemical-mechanical planarization

Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Hydrogen etching of 4H–SiC(0001) facet and step formation

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Wafer-scale synthesis of a morphologically controllable silicon ordered array as a platform and its SERS performance

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser

Femtosecond Laser Nanostructuring on a 4H-Sic Surface by Tailoring the Induced Self-Assembled Nanogratings

Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer

Microscale pattern etch of 4H–SiC by inductively coupled plasma

Femtosecond laser two-beam interference applied to 4H-SiC surface hierarchical micro-nano structure fabrication

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Stepped Morphology on Vicinal 3C- and 4H-Sic (0001) Faces: A Kinetic Monte Carlo Study

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate