Abstract:Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

Extended study of the atomic step-terrace structure on hexagonal SiC (0 0 0 1) by chemical-mechanical planarization

Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1)

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

The Effects of Ultra-Smooth Surface Atomic Step Morphology on CMP Performances of Sapphire and SiC Wafers

Investigation on the Variation of the Step-Terrace Structure on the Surface of Polished GaN Wafer

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Hydrogen etching of 4H–SiC(0001) facet and step formation

Chemical Mechanical Planarization (cmp) of On-Axis Si-Face Sic Wafer Using Catalyst Nanoparticles in Slurry

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Picosecond Laser-Assisted Chemical Mechanical Polishing (CMP): Aiming at the Si-Face of Single-Crystal 6H-Sic Wafer

Effect of basal plane bending on the atomic step morphology of the 4H–SiC substrate surface

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach

Chemical Mechanical Polishing (CMP) of SiC Wafer Using Photo-Catalyst Incorporated Pad

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Core–Shell Structured Silica Nanoparticles as Abrasive for Tungsten Chemical Mechanical Planarization

Investigation on the Surface Characterization of Ga-faced GaN after Chemical-Mechanical Polishing