Abstract:With the development of high-temperature packaging technology, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) can operate under high-temperature conditions with junction temperatures exceeding 175 degrees C, providing a solution for pulsed power applications facing instantaneous high currents and significant temperature fluctuations. However, the electro-thermal coupling behaviors and safe operating area (SOA) of SiC mosfets in a wide temperature range are unclear, and there is a lack of guiding principles for SiC module packaging and heat dissipation design in pulsed power applications. In this article, an electro-thermal coupling model of SiC mosfet modules is established. The electrical model over a wide temperature range (25 degrees C-375 degrees C) is built in Simulink, and the thermal finite element model is established in COMSOL, while MATLAB script is used to implement interaction between the two models. Then, detailed analyses are conducted on the electro-thermal coupling behaviors of SiC mosfet modules. Besides, the impact of packaging on the SOA of SiC mosfet modules is researched. In addition, a transient junction temperature measurement method of SiC mosfets is proposed by using the on-state resistance R-ds(on) as the temperature-sensitive electrical parameter. Finally, the discharge experiments of the capacitor bank through resistive loads are carried out under short pulse and long pulse, respectively, and the experimental results are consistent with the model.

Research on the Technique of Accurately Measuring Thermal Resistance of SiC MOSFET

Measure the Thermal Parameters of SiC MOSFET Through Case Temperature

A Novel Method for Monitoring the Junction Temperature of SiC MOSFET On-line Based on On-state Resistance

An Online Junction Temperature Monitoring Method for SiC MOSFETs Based on a Novel Gate Conduction Model

Online Accurate Measurement of Steady-Thermal Resistance of SiC MOSFETs for DC Solid-State Power Controller

Online Temperature Measurement Method for SiC MOSFET Device Based on Gate Pulse

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC Mosfet at Extremely High Temperatures

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

Understanding the Thermal Characteristics of SiC Power MOSFET Device for Power Modules Design

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Measurement of Thermal Parameters of SiC MOSFET Module by Case Temperature

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage

Guideline for Reproducible SiC MOSFET Thermal Characterization Based on Source-Drain Voltage

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications

Comprehensive Characterization of the 4H-Sic Planar and Trench Gate MOSFETs from Cryogenic to High Temperature

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs