Abstract:This paper proposes a junction temperature measurement method applied to SiC modules. The method is based on the derivation of the turn‐off voltage spike to the junction temperature of the SiC device. The turn‐off voltage spike method has better accuracy as well as stability compared to the conventional method. Because of the advantages of high switching speed, silicon carbide (SiC) devices are widely used in high‐power power electronic equipment. Real‐time monitoring of junction temperature is very important for the safe operation of equipment. There have been many studies on traditional junction temperature monitoring methods based on Si IGBT, but the dynamic characteristics of SiC MOSFETs are changed due to their different physical structure and parasitic parameters, which make the traditional methods no longer applicable. In this paper, the junction temperature can be extracted from the switching process of SiC MOSFET by using the turn‐off voltage spike as the index of thermosensitive electrical parameter (TSEP). In addition, the effect of working voltage, current, and different materials on turn‐off voltage spike is also studied. The simulation platform of Ansys/Simplorer and the experimental test platforms are built, and the theory of junction temperature detection based on turn‐off voltage spike is verified. The simulation and experimental results show that turn‐off voltage spike is a feasible TSEP, which can be used to extract junction temperature of SiC MOSFET with good linearity and instantaneity.

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Guideline for Reproducible SiC MOSFET Thermal Characterization Based on Source-Drain Voltage

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High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power Cycling

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Characterizations on the Doping of Single-Crystal Silicon Carbide

Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs

Electrical Characterization of 1.2kv SiC MOSFET at Extremely High Junction Temperature

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

Nano-scaled Transistor Reliability Characterization at Nano-Second Regime