Abstract:With the development of high-temperature packaging technology, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) can operate under high-temperature conditions with junction temperatures exceeding 175 degrees C, providing a solution for pulsed power applications facing instantaneous high currents and significant temperature fluctuations. However, the electro-thermal coupling behaviors and safe operating area (SOA) of SiC mosfets in a wide temperature range are unclear, and there is a lack of guiding principles for SiC module packaging and heat dissipation design in pulsed power applications. In this article, an electro-thermal coupling model of SiC mosfet modules is established. The electrical model over a wide temperature range (25 degrees C-375 degrees C) is built in Simulink, and the thermal finite element model is established in COMSOL, while MATLAB script is used to implement interaction between the two models. Then, detailed analyses are conducted on the electro-thermal coupling behaviors of SiC mosfet modules. Besides, the impact of packaging on the SOA of SiC mosfet modules is researched. In addition, a transient junction temperature measurement method of SiC mosfets is proposed by using the on-state resistance R-ds(on) as the temperature-sensitive electrical parameter. Finally, the discharge experiments of the capacitor bank through resistive loads are carried out under short pulse and long pulse, respectively, and the experimental results are consistent with the model.

Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power Cycling

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Degradation Assessment of 1.2-Kv SiC MOSFETs and Comparative Study with 1.2-Kv Si IGBTs under Power Cycling

Real-Time Extraction of SiC mosfets' Degradation Features Under Improved Accelerated Power Cycling Tests for DC-SSPC Application

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Online Temperature Measurement Method for SiC MOSFET Device Based on Gate Pulse

Measurement of Thermal Parameters of SiC MOSFET Module by Case Temperature

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions

Degradation Behavior and Defect Analysis for SiC Power MOSFETs Based on Low-Frequency Noise Under Repetitive Power-Cycling Stress

Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions

AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests