Abstract:Abstract Recent theoretical predictions of ferroelectricity in two-dimensional (2D) van der Waals materials reveal exciting possibilities for their use in scalable low-power electronic devices with polarization-dependent functionalities. These prospects have been further invigorated by the experimental evidence of the polarization response in some transition metal chalcogenides (TMCs)—a group of narrow-band semiconductors and semimetals with a wealth of application potential. Among the TMCs, molybdenum disulfide (MoS 2 ) is known as one of the most promising and robust 2D electronic materials. However, in spite of theoretical predictions, no ferroelectricity has been experimentally detected in MoS 2 , while the emergence of this property could enhance its potential for electronics applications. Here, we report the experimental observation of a stable room-temperature out-of-plane polarization ordering in 2D MoS 2 layers, where polarization switching is realized by mechanical pressure induced by a tip of a scanning probe microscope. Using this approach, we create the bi-domain polarization states, which exhibit different piezoelectric activity, second harmonic generation, surface potential, and conductivity. Ferroelectric MoS 2 belongs to the distorted trigonal structural 1T” phase, where a spontaneous polarization is inferred by its P 3 m 1 space-group symmetry and corroborated by theoretical modeling. Experiments on the flipped flakes reveal that the 1T”-MoS 2 samples consist of the monolayers with randomly alternating polarization orientation, which form stable but switchable “antipolar” head-to-head or tail-to-tail dipole configurations. Mechanically written domains are remarkably stable facilitating the application of 1T”-MoS 2 in flexible memory and electromechanical devices.

Measuring Band Modulation of MoS2 with Ferroelectric Gates

Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

Tuning Band Gaps in Twisted Bilayer MoS_2

Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors.

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Direct observation of ferroelectricity in two-dimensional MoS2

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

Measurements of electrically tunable refractive index of MoS2 monolayer and its usage in optical modulators

Engineering band structures of two-dimensional materials with remote moire ferroelectricity

Two dimensional CuInP2S6/h-BN/MoTe2 van der Waals heterostructure phototransistor with double gate control

Engineering band structures of two-dimensional materials with remote moiré ferroelectricity

Direct measurement of ferroelectric polarization in a tunable semimetal

Controllable band offset in monolayer MoSe2 driven by surface termination and ferroelectric field of BiFeO3(0001) substrate

A Gate-Free MoS2 Phototransistor Assisted by Ferroelectrics

Independent Band Modulation in 2D Van Der Waals Heterostructures Via a Novel Device Architecture

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Out-of-Plane Ferroelectricity in Two-Dimensional 1T‴-Mos2 above Room Temperature

Gate-Induced Trans-Dimensionality of Carrier Distribution in Bilayer Lateral Heterosheet of MoS 2 and WS 2 for Semiconductor Devices with Tunable Functionality