Abstract:Vanadium atoms are controllably introduced into monolayer WS2 to achieve continuous electrical polarity modulation. Field‐effect transistors based on the 4.7 at% V‐doped WS2 show outstanding p‐type performance. Expanding on this triumph, the inaugural prototype of a monolayer homogeneous complementary metal‐oxide‐semiconductor (CMOS) inverter device is constructed through atomic substitutional doping in transition metal dichalcogenides (TMDs). As demand for higher integration density and smaller devices grows, silicon‐based complementary metal‐oxide‐semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n‐type to ambipolar, then to p‐type, and ultimately to a quasi‐metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p‐type dopants during chemical vapor deposition (CVD). The achievement of purely p‐type field‐effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V‐doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.

Comprehensive Polarity Regulation of WSe2 Field‐Effect Transistors Enabled by Combining Contact Engineering and Plasma Doping

The Ambipolar Evolution of a High-Performance WSe2 Transistor Assisted by a Ferroelectric Polymer.

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Electrical Polarity Modulation in V‐Doped Monolayer WS2 for Homogeneous CMOS Inverters

Precisely Tailoring WSe2 Polarity via van der Waals Bismuth-Gold Modulated Contact

Controlling phase transition in WSe2 towards ideal n-type transistor

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Regulating the conductance of tungsten diselenide by oxygen plasma and improving its electrical stability by encapsulation

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

Tunable Current Regulative Diode Based on Van Der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor

Reconfigurable InSe Electronics with van der Waals Integration

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.