Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.

Regulating the conductance of tungsten diselenide by oxygen plasma and improving its electrical stability by encapsulation

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Enhancing Electronic And Optoelectronic Performances Of Tungsten Diselenide By Plasma Treatment

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs

Modification of the Electronic Transport in Atomically Thin WSe2 by Oxidation

High‐performance Electronics and Optoelectronics of Monolayer Tungsten Diselenide Full Film from Pre‐seeding Strategy

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Stable Electrical Performance Observed in Large-Scale Monolayer Wse2(1-X)S2x with Tunable Band Gap

Comprehensive Polarity Regulation of WSe2 Field‐Effect Transistors Enabled by Combining Contact Engineering and Plasma Doping

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

Controlling phase transition in WSe2 towards ideal n-type transistor

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant

The Effect of Air Stable N-Doping Through Mild Plasma on the Mechanical Property of WSe2 Layers

Ambipolar and Robust WSe<sub>2</sub> Field-Effect Transistors Utilizing Self-Assembled Edge Oxides

Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors

Surface Modification for WSe 2 Based Complementary Electronics

High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics

Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides