Integrated Ge-Sb-S Chalcogenide Raman Laser

Yufei Huang,Jiaxin Zhao,Di Xia,Pingyang Zeng,Zelin Yang,Bin Zhang,Zhaohui Li

DOI: https://doi.org/10.1364/cleo_at.2021.jw1a.101

2021-01-01

Abstract:We demonstrate an integrated Raman laser based on Ge-Sb-S high-Q microresonators. Both single-mode and multimode operation are shown with a low lasing threshold of ~9 mW. Besides, cascaded Raman lasing is demonstrated.

What problem does this paper attempt to address?

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Guanzhong Wang,Xiaoshun Jiang,Mingxiao Zhao,Yaoguang Ma,Huibo Fan,Qing Yang,Limin Tong,Min Xiao

DOI: https://doi.org/10.1364/OE.20.029472

IF: 3.8

2012-01-01

Optics Express

Abstract:We experimentally demonstrate a hybrid structure microlaser on chip with a single CdSe nanowire attached to a high-Q silica microdisk cavity at room temperature. When pumped by a 532 nm pulse laser, both single-longitudinal mode and multi-longitudinal mode lasers with linewidth of 0.18 nm are obtained from the hybrid structure with a 58-mu m-diameter microdisk and a 250-nm diameter nanowire. The measured lasing threshold of the microlaser is as low as 100 mu J/cm(2). (C) 2012 Optical Society of America
Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Yufei Huang,Di Xia,Pingyang Zeng,Jiaxin Zhao,Zelin Yang,Suwan Sun,Liyang Luo,Guiying Hu,Dong Liu,Yufei Li,Hairun Guo,Bin Zhang,Zhaohui Li

DOI: https://doi.org/10.1002/lpor.202100443

2021-07-25

Abstract:Chalcogenide glass (ChG) is an attractive material for integrated nonlinear photonics due to its wide transparency and high nonlinearity, and its capability of being directly deposited and patterned on Silicon wafer substrates. It has a singular Raman effect among amorphous materials. Yet, the Raman lasing performance in high quality and chip integrated ChG microresonators remains unexplored. Here, we demonstrate an engineered Raman lasing dynamic based on home developed photonic integrated high-Q ChG microresonators. With a quality factor above 10^6, we achieve the record-low lasing threshold 3.25 mW among integrated planar photonic platforms. Both the single-mode Raman lasers and a broadband Raman-Kerr comb are observed and characterized, which is dependent on the dispersion of our flexible photonic platform and engineered via tuning the waveguide geometric size. The tunability of such a chipscale Raman laser is also demonstrated through tuning the pump wavelength and tuning the operating temperature on the chip. This allows for the access of single-mode lasing at arbitrary wavelengths in the range 1615-1755 nm. Our results may contribute to the understanding of rich Raman and Kerr nonlinear interactions in dissipative and nonlinear microresonators, and on application aspect, may pave a way to chip-scale efficient Raman lasers that is highly desired in spectroscopic applications in the infrared.

Optics
High-quality Integrated Chalcogenide Microring Resonators for Efficient Brillouin lasers

Yufei Li,Di Xia,Junjie Xiao,Liyang Luo,Xin Zhao,Zhixin Li,Zhaohui Li,Bin Zhang

2023-01-01

Abstract:We report an integrated GeSbS microring resonator with intrinsic quality factors of more than 5 million, first demonstrating a Brillouin laser with fundamental linewidth of 143 Hz and an output power up to 1 mW.
Integrated Ge-Sb-S Chalcogenide Microresonator on Chip for Nonlinear Photonics

Di Xia,Zelin Yang,Pingyang Zeng,Yufei Huang,Yaodong Sun,Jingshun Pan,Jingcui Song,Ying Zhu,Hairun Guo,Bin Zhang,Zhaohui Li

DOI: https://doi.org/10.1364/cleopr.2020.c3c_1

2020-01-01

Abstract:We demonstrated an integrated environment friendly chalcogenide glasses (ChG)-microresonator with a loaded Q-factor of ~0.4 million. Kerr combs in the ChG-based resonators were firstly observed.
Low-loss compact chalcogenide microresonators for efficient stimulated Brillouin lasers

Yufei Li,Di Xia,Huanjie Cheng,Liyang Luo,Linyi Wang,Siqing Zeng,Shuixian Yang,Linze Li,Baile Chen,Bin Zhang,Zhaohui Li

DOI: https://doi.org/10.1364/OL.534233

2024-08-15

Abstract:Chalcogenide glasses (ChGs) possess a high elasto-optic coefficient, making them ideal for applications in microwave photonics and narrow-linewidth lasers based on stimulated Brillouin scattering (SBS). However, current As2S3-based integrated devices suffer from poor stability and low laser-induced damage threshold, and planar ChG devices feature limited quality factors. In this Letter, we propose and demonstrate a high-quality integrated GeSbS ChG Brillouin photonic device. By introducing Euler bending structures, we suppress high-order optical modes and reduce propagation losses in a finger-shaped GeSbS microresonator, resulting in a compact footprint of 3.8 mm2 and a high intrinsic quality factor of 5.19 × 106. The combination of GeSbS material's high Brillouin gain and the resonator's high-quality factor enables the generation of stimulated Brillouin lasers with a low threshold of 0.96 mW and a fundamental linewidth of 58 Hz. Moreover, cascaded stimulated Brillouin lasers can be realized up to the seventh order, yielding microwave beat frequencies up to 40 GHz.
High-efficiency Brillouin Lasing in a Planar GeSbS Spiral-Ring Resonator

Jingcui Song,Yuhang Wei,Chunxu Wang,Shuixian Yang,Yan Li,Tianhua Feng,Xiaojie Guo,Zhaohui Li

DOI: https://doi.org/10.3788/col202422.071902

IF: 2.56

2024-01-01

Chinese Optics Letters

Abstract:Stimulated Brillouin scattering in planar integrated circuits promises to realize compact and highly coherent lasers. Here we report efficient Brillouin lasing at telecommunication wavelength from a planar Ge25Sb10S65 chalcogenide (ChG) resonator with a high quality factor above 106. A low lasing threshold of 24.8 mW is achieved with a slope efficiency of 8.3%. An 8-kHz linewidth is measured for 1.56-mW on-chip output power. This work offers a good opportunity to enrich the versatility and functionality of the ChG photonics on account of their intrinsic advantages of low loss, high third-order nonlinearity, and potential capacity for wafer-scale fabrication.
Self-assembled gratings in chalcogenide microresonators for ultralow-threshold integrated Brillouin lasers

Di Xia,Jianteng Huang,Liyang Luo,Yufei Li,Zhaohui Li,Bin Zhang

2023-01-01

Abstract:We present a reconfigurable selective mode splitting based on self-assembled refractive index grating in integrated GeSbS microresonators, enabling an efficient Brillouin laser with a record low threshold power of 0.46 mW in chalcogenide microresonators.
Demonstration of High-Q Mid-Infrared Chalcogenide Glass-On-Silicon Resonators

Hongtao Lin,Lan Li,Yi Zou,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Stephen Kozacik,Maciej Murakowski,Dennis Prather,Pao T. Lin,Vivek Singh,Anu Agarwal,Lionel C. Kimerling,Juejun Hu

DOI: https://doi.org/10.1364/ol.38.001470

IF: 3.6

2013-01-01

Optics Letters

Abstract:We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2×10(5) at 5.2 μm wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits.
Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Hongtao Lin,Chul Soo Kim,Lan Li,Mijin Kim,William W. Bewley,Charles D. Merritt,Chadwick L. Canedy,Igor Vurgaftman,A. N. U. Agarwal,Kathleen Richardson,Juejun Hu,Jerry R. Meyer

DOI: https://doi.org/10.1364/ome.435061

2021-01-01

Optical Materials Express

Abstract:Mid-infrared photonic integrated circuits (PICs) that combine on-chip light sources with other optical components constitute a key enabler for applications such as chemical sensing, light detection, ranging, and free-space communications. In this paper, we report the monolithic integration of interband cascade lasers emitting at 3.24 µm with passive, high-index-contrast waveguides made of chalcogenide glasses. Output from the chalcogenide waveguides exhibits pulsed peak power up to 150 mW (without roll-over), threshold current density 280 A/cm2, and slope efficiency 100 mW/A at 300 K, with a lower bound of 38% efficiency for coupling between the two waveguides. These results represent an important step toward the realization of fully integrated mid-infrared PICs.
High Efficiency Raman Lasing in Integrated GaN Microresonators

Zhaoqin He,Changzheng Sun,Bing Xiong,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2024.sw3o.7

2024-01-01

Abstract:We demonstrate high efficiency integrated Raman laser based on high-Q GaN microresonators. A threshold pump power of ~ 21 mW and a slope efficiency of ~ 44.5% are recorded.
Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities.

Xinpeng Fu,Xihong Fu,Yongyi Chen,Li Qin,Hangyu Peng,Ruixin Shi,Fangfei Li,Qiang Zhou,Yubing Wang,Yinli Zhou,Yongqiang Ning

DOI: https://doi.org/10.1021/acs.jpclett.9b03589

2019-01-01

Abstract:Developing integrable, nanoscale, and low-energy-consumption lasers is a crucial step toward on-chip optical communications and computing technologies. The strong exciton-photon interaction that emerged in monolayer transition metal dichalcogenides (TMDs) holds promise for engineering and integration. Herein, we prepare the MoSe2/microsphere cavities excitonic lasers by placing SiO2 microspheres on top of a monolayer MoSe2 film. By virtue of continuous-wave exciting MoSe2/microsphere whispering gallery mode (WGM) cavities, we realize multiple excitonic WGM lasing in the emission wavelength range of similar to 750-875 nm at room temperature with tunable properties of free spectral range (FSR) and full width at half-maximum (fwhm) by varying the microsphere size. Theoretical calculations based on the finite element method (FEM) using COMSOL software were utilized to identify lasing modes and reveal the corresponding electric field distribution. These findings help to deepen fundamental understanding of excitonic WGM lasing and provide a promising research platform for integrable, scalable, and low-cost laser devices.
Raman Lasing in a Silica Microdisk Resonator

Xinyu Cheng,Jiaxin Gu,Longfu Xiao,Guanyu Li,Xiaoshun Jiang,Min Xiao

DOI: https://doi.org/10.1364/cleopr.2018.tu3h.3

2018-01-01

Abstract:We have demonstrated a chip-based Raman laser by using a silica microdisk resonator with an intrinsic optical Q-factor of 1.5×10 7 . The achieved lasing threshold is as low as 3.9 mw with a conversion efficiency of 7.5%.
Cavity-enhanced Mid-Infrared On-Chip Chemical Sensing Using High-Q Chalcogenide Glass Resonators

Hongtao Lin,Yesh Chillakuru,Kati McLaughlin,Lan Li,Yi Zou,Fei Deng,Chaoying Ni,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Juejun Hu

DOI: https://doi.org/10.1109/icsens.2013.6688278

2013-01-01

Abstract:We experimentally demonstrated for the first time on-chip cavity-enhanced mid-infrared spectroscopic sensing of chemical molecules, performed near 5.2 μm wavelength using Ge23Sb7S70 resonators monolithically fabricated on CaF2 substrates.
Energy Efficient Chalcogenide Waveguide Raman Laser for Optical Interconnect.

Ying Huang,Ping Shum,Feng Luan,Ming Tang

DOI: https://doi.org/10.1364/oe.18.024434

IF: 3.8

2010-01-01

Optics Express

Abstract:We propose and theoretically demonstrate that chalcogenide (As2Se3) waveguide is a more energy efficient platform for Raman amplification and lasing than silicon for optical interconnect applications. In spite of its smaller Raman gain, ultrahigh maximum conversion efficiency of 40%, seven times better than that of silicon Raman laser, is obtained. 33% lasing threshold reduction to 299 mW is simultaneously observed, together with wider linear region. A figure-of-merit (FOM) factor has been established for direct comparison between As2Se3 and silicon waveguide Raman laser. It is found that As2Se3 is superior in terms of energy consumption and device miniaturization capability. Further threshold reduction to 100 mW is achieved by optimizing Stokes end-facet reflectivity.
Hybrid Integrated GaSb/Si3N4 DBR Lasers with >30 Mw Output Power and >50 Nm Wavelength Coverage

Chunfan Zhu,Zhengqi Geng,Jincheng Wei,Chengao Yang,Zhichuan Niu,Ruijun Wang,Siyuan Yu

DOI: https://doi.org/10.1364/cleo_si.2024.sm4g.5

2024-01-01

Abstract:We demonstrate hybrid integrated lasers based on a GaSb-based gain chip coupled to a silicon nitride photonic integrated circuit containing Bragg grating posts. The lasers exhibit output power >30 mW and >50 nm wavelength coverage.
High-Q Resonance in GeSn-based Bound States in the Continuum Microcavity

Xinyi Liu,Yan Liu,Cizhe Fang,Yan Huang,Yao Shao,Genquan Han,Yue Hao

DOI: https://doi.org/10.1364/ao.405209

IF: 1.9

2020-01-01

Applied Optics

Abstract:In recent years, the investigations of lasers based on group IV material have been limited by the low quality (Q) factor of the resonant modes. With the improvement of the optical bound states in the continuum (BICs) in various dielectric systems, we propose a novel design that takes advantages of both the direct bandgap dielectric material GeSn and the BIC phenomenon. In addition to the demonstration of the unprecedented high-Q factors (i.e., ∼ 10 10 ) that improve the emission process, the vertical symmetry broken structure can emit light at the wavelength of 1870 nm with higher luminous intensity (i.e., ∼ 24 ). The modulation effect of the material and geometric parameters on the Q value and the luminous intensity of the structure are also demonstrated. Our investigations provide useful guidelines for potential applications such as on-chip light sources in group IV photonics and optical communications.
Demonstration of Yb3+-doped and Er3+/Yb3+-codoped On-Chip Microsphere Lasers

Yun-Qi Hu,Xuan Mao,Hong Yang,Min Wang,Guo-Qing Qin,Gui-Lu Long

DOI: https://doi.org/10.1364/oe.427356

IF: 3.8

2021-01-01

Optics Express

Abstract:Rare-earth-doped on-chip microlasers are of great significance in both fundamental research and engineering. To the best of our knowledge, this is the first report of Yb3+-doped and Er3+/Yb3+-codoped on-chip microsphere lasers fabricated via sol-gel synthesis. Laser emissions were observed in a band around 1040 nm in both Yb3+-doped and Er3+/Yb3+-codoped resonators pumped at 980 nm and had measured ultralow thresholds of 5.2 µW and 0.6 µW, respectively. Both single-mode and multi-mode emissions were recorded around 1040 nm in these lasers. Single-mode and two-mode emissions were obtained at 1550 nm in the Er3+/Yb3+-codoped lasers when pumped at 980 nm and 1460 nm, respectively. Furthermore, quality factors induced by different loss mechanisms in the microsphere lasers are theoretically estimated. These resonators are expected to contribute to the high-density integration of on-chip silica-based microlasers.
Integrated Brillouin Laser with Sub-Milliwatt Threshold

Ki Youl Yang,Boqiang Shen,Heming Wang,Qi-Fan Yang,Xu Yi,Seung Hoon Lee,Dong Yoon Oh,Kerry Vahala

DOI: https://doi.org/10.1364/cleo_si.2018.sf2j.6

2018-01-01

Abstract:A Brillouin laser featuring an ultra-high-Q silica cavity monolithically integrated with a silicon-nitride waveguide is demonstrated. The device features a sub-milliwatt threshold pump power and provides high-coherence output for on-chip sources, gyroscopes, and microwave generation.
Dark-pulse Microcombs in Integrated Chalcogenide Microresonators

Di Xia,Jiayue Wu,Zifu Wang,Yufei Li,Jiaxin Zhao,Liyang Luo,Dong Liu,Shuixian Yang,Bin Zhang,Zhaohui Li

DOI: https://doi.org/10.1109/cleo-pr62338.2022.10432349

2022-01-01

Abstract:We demonstrate dark-pulse microcombs generated in an integrated GeSbS microresonator with low pumping power of the ten-milliwatt level. Benefiting from both the high Q-factor and nonlinearity of the microresonator, high-efficiency microcombs are achieved.
Self-Injection Locked Nonlinear Brillouin Laser in Chalcogenide Microresonators

Wendong Chen,Zifu Wang,Di Xia,Yufei Li,Zhaohui Li,Bin Zhang

DOI: https://doi.org/10.1109/cleo-pr60912.2024.10676649

2024-01-01

Abstract:We demonstrate a self-injection locked nonlinear Brillouin laser in an integrated chalcogenide microresonator with an intrinsic linewidth of 1 Hz and 50 dB frequency noise suppression compared to a free-running DFB laser.

Integrated Ge-Sb-S Chalcogenide Raman Laser

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

High-quality Integrated Chalcogenide Microring Resonators for Efficient Brillouin lasers

Integrated Ge-Sb-S Chalcogenide Microresonator on Chip for Nonlinear Photonics

Low-loss compact chalcogenide microresonators for efficient stimulated Brillouin lasers

High-efficiency Brillouin Lasing in a Planar GeSbS Spiral-Ring Resonator

Self-assembled gratings in chalcogenide microresonators for ultralow-threshold integrated Brillouin lasers

Demonstration of High-Q Mid-Infrared Chalcogenide Glass-On-Silicon Resonators

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

High Efficiency Raman Lasing in Integrated GaN Microresonators

Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities.

Raman Lasing in a Silica Microdisk Resonator

Cavity-enhanced Mid-Infrared On-Chip Chemical Sensing Using High-Q Chalcogenide Glass Resonators

Energy Efficient Chalcogenide Waveguide Raman Laser for Optical Interconnect.

Hybrid Integrated GaSb/Si3N4 DBR Lasers with >30 Mw Output Power and >50 Nm Wavelength Coverage

High-Q Resonance in GeSn-based Bound States in the Continuum Microcavity

Demonstration of Yb3+-doped and Er3+/Yb3+-codoped On-Chip Microsphere Lasers

Integrated Brillouin Laser with Sub-Milliwatt Threshold

Dark-pulse Microcombs in Integrated Chalcogenide Microresonators

Self-Injection Locked Nonlinear Brillouin Laser in Chalcogenide Microresonators