High Efficiency Raman Lasing in Integrated GaN Microresonators

Zhaoqin He,Changzheng Sun,Bing Xiong,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2024.sw3o.7

2024-01-01

Abstract:We demonstrate high efficiency integrated Raman laser based on high-Q GaN microresonators. A threshold pump power of ~ 21 mW and a slope efficiency of ~ 44.5% are recorded.

What problem does this paper attempt to address?

Femtosecond Laser Direct Writing of High-Q Microresonators in Glass and Crystals

Jintian Lin,Yingxin Xu,Jiangxin Song,Jialei Tang,Zhiwei Fang,Min Wang,Wei Fang,Ya Cheng

DOI: https://doi.org/10.1117/12.2071737

2015-01-01

Abstract:We report on fabrication of microresonators of high quality (high-Q) factors in both glass and crystalline materials by femtosecond laser 3D micromachining. Based on this novel approach, we obtained high-Q microresonators of non-in-plane geometries in glass materials such as fused silica and Nd:glass and demonstrated lasing at a pump power as low as 69 microwatts. We also fabricated on-chip microresonators of sub-100 mu m diameters in crystalline materials including calcium fluoride and lithium niobate, and demonstrated efficient second harmonic generation using the high-Q lithium niobate microresonator. Furthermore, femtosecond laser 3D micromachining allows direct integration of the microresonators with other functional microcomponents, such as a microfluidic mixer and a microheater, leading to compact microdevices with enhanced functionalities. Our technique opens new avenues for fabricating high-Q microresonators with either 2D or 3D geometries on various types of dielectric materials.
Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

Renhong Gao,Haisu Zhang,Fang Bo,Wei Fang,Zhenzhong Hao,Ni Yao,Jintian Lin,Jianglin Guan,Li Deng,Min Wang,Lingling Qiao,Ya Cheng

DOI: https://doi.org/10.1088/1367-2630/ac3d52

2021-01-01

New Journal of Physics

Abstract:Microresonators of ultrahigh quality (Q) factors represent a crucial type of photonic devices aiming at ultra-high spectral resolution, ultra-high sensitivity to the environmental perturbations, and efficient nonlinear wavelength conversions at low threshold pump powers. Lithium niobate on insulator (LNOI) microdisks of high Q factors are particularly attractive due to its large second-order nonlinear coefficient and strong electro-optic property. In this letter, we break through the long standing bottleneck in achieving the Q factors of LNOI microresonators beyond 108, which approaches the intrinsic material absorption limit of lithium niobate (LN). The ultra-high Q factors give rise to a rich family of nonlinear optical phenomena from optical parametric oscillation (OPO) to harmonics generation with unprecedented characteristics including ultra-low pump threshold, high wavelength conversion efficiency, and ultra-broad operation bandwidth. Specifically, the threshold of OPO is measured to be only 19.6 μW, and the absolute conversion efficiency observed in the second harmonic generation reaches 23%. The record-breaking performances of the on-chip ultra-high Q LNOI microresonators will have profound implication for both photonic research and industry.
Highly-efficient second and third harmonic generation in a monocrystalline lithium niobate microresonator.

Jintian Lin,Yao Ni,Zhenzhong Hao,Jianhao Zhang,Wenbo Mao,Min Wang,Wei Chu,Rongbo Wu,Zhiwei Fang,Lingling Qiao,Wei Fang,Fang Bo,Ya Cheng

2018-01-01

Abstract:Nonlinear optics in whispering-gallery-mode (WGM) microresonators have attracted much attention. Owing to strong confinement of the light in a small volume, a WGM microresonator can dramatically boost the strength of light field, giving rise to enhancement of the nonlinear interactions of light with the resonator material. Here, we demonstrate highly efficient second harmonic generation (SHG) and third harmonic generation (THG) in an on-chip monocrystalline lithium niobate (LN) microresonator. Benefitting from a cyclic phase matching scheme for the transverse-electric WGMs, nonlinear wavelength conversion utilizing the largest second-order nonlinear coefficient d33, which has not been demonstrated until now despite of its obvious advantage, is successfully achieved in an X-cut LN microresonator. We obtain high conversion efficiencies in not only the SHG (3.8% mW^-1) but also the THG (0.3% mW^-2) realized through a cascaded sum-frequency process. Our results represent a major step toward the classical and quantum photonic integrated circuits.
Fabrication of Microresonators of High Q/V Ratios Using Femtosecond Laser Micromachining

M. Wang,J. Lin,Y. Xu,Z. Fang,Z. Liu,W. Fang,Y. Cheng

DOI: https://doi.org/10.1364/cleo_at.2016.jth2a.39

2016-01-01

Abstract:We report on fabrication of on-chip lithium niobate (LN) microresonators with high Q/V ratio by femtosecond laser micromachining. A Purcell-factor of 2.8×10 3 is obtained in a microdisk with a diameter of 6.42 μm.
Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Yufei Huang,Di Xia,Pingyang Zeng,Jiaxin Zhao,Zelin Yang,Suwan Sun,Liyang Luo,Guiying Hu,Dong Liu,Yufei Li,Hairun Guo,Bin Zhang,Zhaohui Li

DOI: https://doi.org/10.1002/lpor.202100443

2021-07-25

Abstract:Chalcogenide glass (ChG) is an attractive material for integrated nonlinear photonics due to its wide transparency and high nonlinearity, and its capability of being directly deposited and patterned on Silicon wafer substrates. It has a singular Raman effect among amorphous materials. Yet, the Raman lasing performance in high quality and chip integrated ChG microresonators remains unexplored. Here, we demonstrate an engineered Raman lasing dynamic based on home developed photonic integrated high-Q ChG microresonators. With a quality factor above 10^6, we achieve the record-low lasing threshold 3.25 mW among integrated planar photonic platforms. Both the single-mode Raman lasers and a broadband Raman-Kerr comb are observed and characterized, which is dependent on the dispersion of our flexible photonic platform and engineered via tuning the waveguide geometric size. The tunability of such a chipscale Raman laser is also demonstrated through tuning the pump wavelength and tuning the operating temperature on the chip. This allows for the access of single-mode lasing at arbitrary wavelengths in the range 1615-1755 nm. Our results may contribute to the understanding of rich Raman and Kerr nonlinear interactions in dissipative and nonlinear microresonators, and on application aspect, may pave a way to chip-scale efficient Raman lasers that is highly desired in spectroscopic applications in the infrared.

Optics
Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform

Jingwei Li,Ruixuan Wang,Adnan A. Afridi,Yaoqin Lu,Xiaodong Shi,Wenhan Sun,Haiyan Ou,Qing Li

DOI: https://doi.org/10.1021/acsphotonics.3c01750

IF: 7

2024-02-27

ACS Photonics

Abstract:Implementing stimulated Raman scattering in a low-loss microresonator could lead to Raman lasing. Here, we report the demonstration of an efficient Raman laser with >50% power efficiency in an integrated silicon carbide platform for the first time. By fine-tuning the free spectral range (FSR) of 43 μm-radius silicon carbide microresonators, the Stokes resonance corresponding to the dominant Raman shift of 777 cm^(-1) (23.3 THz) is aligned to the center of the Raman gain spectrum, resulting in a...

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Integrated multi-color Raman microlasers with ultra-low pump levels in single high-Q lithium niobate microdisks

Guanghui Zhao,Jintian Lin,Botao Fu,Renhong Gao,Chuntao Li,Ni Yao,Jianglin Guan,Minghui Li,Min Wang,Lingling Qiao,Ya Cheng

2023-12-16

Abstract:Photonic integrated Raman microlasers, particularly discrete multi-color lasers which are crucial for extending the emission wavelength range of chip-scale laser sources to much shorter wavelength, are highly in demand for various spectroscopy, microscopy analysis, and biological detection. However, integrated multi-color Raman microlasers have yet to be demonstrated because of the requirement of high-Q microresonators possessing large second-order nonlinearity and strong Raman phonon branches and the challenging in cavity-enhanced multi-photon hyper-Raman scattering parametric process. In this work, integrated multi-color Raman lasers have been demonstrated for the first time at weak pump levels, via the excitation of high-Q (>6 X 10^6) phase-matched modes in single thin-film lithium niobate (TFLN) microresonators by dispersion engineering. Raman lasing was observed at 1712 nm for a 1546-nm pump threshold power of only 620 uW. Furthermore, multi-color Raman lasers were realized at discrete wavelengths of 1712 nm, 813 nm, 533 nm and 406 nm with pump levels as low as 1.60 mW, which is more than two order of magnitude lower than the current records (i.e., 200 mW) in bulk resonators, allowed by the fulfillment of the requisite conditions consisting of broadband natural phase match, multiple-resonance and high Q-factors.

Optics
Raman Lasing in a Silica Microdisk Resonator

Xinyu Cheng,Jiaxin Gu,Longfu Xiao,Guanyu Li,Xiaoshun Jiang,Min Xiao

DOI: https://doi.org/10.1364/cleopr.2018.tu3h.3

2018-01-01

Abstract:We have demonstrated a chip-based Raman laser by using a silica microdisk resonator with an intrinsic optical Q-factor of 1.5×10 7 . The achieved lasing threshold is as low as 3.9 mw with a conversion efficiency of 7.5%.
Low-Threshold Chip-Scale Aluminum Nitride Raman Laser

Xianwen Liu,Changzheng Sun,Bing Xiong,Jian Wang,Lai Wang,Yanjun Han,Zhibiao Hao,Hongtao Li,Yi Luo,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang

2016-01-01

Abstract:Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ~1.2×106. The threshold pump power is ~8.7 mW, with unidirectional slope efficiency of ~5.1%. Raman frequency shifts of ~612 and ~657 cm-1 are observed for incident light with different polarization.
High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Junqi Liu,Fengqi Liu,Lü Li,Yong Shao,Yu Guo,Zhanguo Wang

DOI: https://doi.org/10.1088/0256-307x/23/7/035

2006-01-01

Abstract:We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60 μm respectively, a peak output power more than 500 mW is achieved in pulsed mode operation. A low threshold current density Jth = 2.6 kA/cm2 gives the devices good lasing characteristics. In a drive frequency of 1 kHz, the laser operates up to 20% duty cycle.
Integrated Continuous-Wave Aluminum Nitride Raman Laser

Xianwen Liu,Changzheng Sun,Bing Xiong,Lai Wang,Jian Wang,Yanjun Han,Zhibiao Hao,Hongtao Li,Yi Luo,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang

DOI: https://doi.org/10.1364/optica.4.000893

IF: 10.4

2017-01-01

Optica

Abstract:Wurtzite aluminum nitride (AlN) is known to exhibit six Raman-active optic phonons, making it appealing for Raman lasing. Here, we demonstrate continuous-wave Raman lasers with a low threshold and a high slope efficiency in high quality factor AlN-on-sapphire microrings. Stokes radiations around 1.7-1.8 mu m and cascaded operation into 1.9-2.0 mu m are identified with a telecom pump. Two types of Stokes lights with distinct Raman shifts and polarizations are recorded via selective excitation of corresponding optic phonons, in accordance with the Raman selection rules in AlN. The observed lasing behavior is satisfactorily accounted for by a theoretical analysis. Our results indicate that AlN-on-sapphire should be promising for integrated nonlinear optics. (C) 2017 Optical Society of America
InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

Rui Zhou,Meixin Feng,Jin Wang,Qian Sun,Jianxun Liu,Shuming Zhang,Masao Ikeda,Tong Liu,Zengli Huang,Xing Sheng,Hui Yang

DOI: https://doi.org/10.1021/acsphotonics.0c01061

IF: 7

2020-09-23

ACS Photonics

Abstract:Highly efficient electrically injected light source on exact Si(100) has been the bottleneck of Si photonics for decades. InGaN-based laser with a direct bandgap may serve as an efficient on-chip light source. But InGaN-based laser with a p-side ridge waveguide usually has a large electrical resistance and operation voltage, converting electricity into excessive Joule heat. The low wall plug efficiency, together with a large thermal resistance, leads to a high junction temperature, severely degrading device performance. Here, we proposed and fabricated a new laser structure with the ridge waveguide inverted from p-side to n-side. The differential electrical resistance and threshold voltage were slashed by 48% and 1.4 V, respectively. The thermal resistance and junction temperature were also reduced by 8 K/W and 25 °C, respectively. As a result, InGaN-based laser on exact Si(100) has been demonstrated under room-temperature continuous-wave current injection, which is fully compatible with Si-based microelectronics and a photonics platform.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.0c01061?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.0c01061</a>.Section 1, The detailed epitaxial structures of the nRW-LD and pRW-LD wafers; Section 2, The device fabrication process of the nRW-LDs; Section 3, The optical field distribution of nRW-LDs; Section 4, The detailed description for the measurement of junction temperature; Section 5, The statistic measurement results of the threshold current of nRW-LDs; Section 6, The detailed information on simulation study about thermal characteristics (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.0c01061/suppl_file/ph0c01061_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Integrated Gallium Nitride Microresonators for Broadband Kerr Comb Generation

Yanzhen Zheng,Changzheng Sun,Bing Xiong,Lai Wang,Zhibiao Hao,Jian Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2021.stu1f.1

2021-01-01

Abstract:Dispersion engineered gallium nitride (GaN) microring resonators with quality factor exceeding 2 million are fabricated. Broadband Raman-Kerr combs are generated by taking advantage of this high Q GaN microresonator.
One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

Feifei Wang,Lan Jiang,Jingya Sun,Changji Pan,Yiling Lian,Jiaxin Sun,Kai Wang,Qingsong Wang,Jiaxing Wang,Yongfeng Lu

DOI: https://doi.org/10.1021/acsami.0c19726

2021-02-17

Abstract:The third-generation semiconductors are the cornerstone of the power semiconductor leap forward and have attracted much attention because of their excellent properties and wide applications. Meanwhile, femtosecond laser processing as a convenient method further improves the performance of the related devices and expands the application prospect. In this work, an approximate 3 times improvement of the internal quantum efficiency (IQE) and a 5.5 times enhancement of the photoluminescence (PL) intensity were achieved in the GaN film prepared using a one-step femtosecond laser fabrication method. Three types of final micro/nanostructures were found with different femtosecond laser fluences, which could be attributed to the decomposition, melting, bubble nucleation, and phase explosion of GaN. The mechanisms of the microbump structure formation and enhancement of IQE were studied experimentally by the time-resolved reflection pump-probe technique, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Simulations for the laser-GaN interaction have also been performed to ascertain the micro/nanostructure formation principle. These results promote the potential applications of femtosecond lasers on GaN and other wide band gap semiconductors, such as UV-light-emitting diodes (LEDs), photodetectors, and random lasers for use in sensing and full-field imaging.
An integrated diamond Raman laser pumped in the near-visible

Pawel Latawiec,Vivek Venkataraman,Amirhassan Shams-Ansari,Matthew Markham,Marko Loncar

DOI: https://doi.org/10.1364/OL.43.000318

2017-12-13

Abstract:Using a high-Q diamond microresonator (Q > 300,000) interfaced with high-power-handling directly-written doped-glass waveguides, we demonstrate a Raman laser in an integrated platform pumped in the near-visible. Both TM-to-TE and TE-to-TE lasing is observed, with a Raman lasing threshold as low as 20 mW and Stokes power of over 1 mW at 120 mW pump power. Stokes emission is tuned over a 150 nm (60 THz) bandwidth around 875 nm wavelength, corresponding to 17.5% of the center frequency.

Optics
Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

Hanru Zhao,Meixin Feng,Jianxun Liu,Xiujian Sun,Tao Tao,Qian Sun,Hui Yang

DOI: https://doi.org/10.1515/nanoph-2022-0577

IF: 7.5

2023-01-05

Nanophotonics

Abstract:GaN-based microring lasers grown on Si are promising candidates for compact and efficient light sources in Si-based optoelectronic integration and optical interconnect due to their small footprints, low mode volume, low power consumption, and high modulation rate. However, the high symmetry of circular microcavity leads to isotropic emission, which not only reduces the light collection efficiency, but also affects other adjacent devices during data transmission. In this study, the unidirectional lasing emission of room-temperature current-injected GaN-based microring laser was realized by coating metal Ag on the microring sidewall and integrating a direct coupled waveguide. The light was efficaciously confined in the cavity and only emitted from the waveguide, which avoided optical signal crosstalk with other adjacent devices. Furthermore, we integrated a microdisk at the other end of the waveguide as a photodetector, which could effectively detect the output power of the microring laser from the direct coupled waveguide. Therefore, a preliminary on-chip integration of GaN-based microring laser, waveguide and photodetector on Si substrate was successfully demonstrated for the first time, opening up a new way for on-chip integration and optical interconnect on a GaN-on-Si platform.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-$Q$ microresonators

Warren Jin,Qi-Fan Yang,Lin Chang,Boqiang Shen,Heming Wang,Mark A. Leal,Lue Wu,Avi Feshali,Mario Paniccia,Kerry J. Vahala,John E. Bowers

DOI: https://doi.org/10.1038/s41566-021-00761-7

2020-09-16

Abstract:Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is a mass-produced integrated laser with superior coherence. Here, we bridge conventional semiconductor lasers and coherent optical systems using CMOS-foundry-fabricated microresonators with record high $Q$ factor over 260 million and finesse over 42,000. Five orders-of-magnitude noise reduction in the pump laser is demonstrated, and for the first time, fundamental noise below 1 Hz$^2$ Hz$^{-1}$ is achieved in an electrically-pumped integrated laser. Moreover, the same configuration is shown to relieve dispersion requirements for microcomb generation that have handicapped certain nonlinear platforms. The simultaneous realization of record-high $Q$ factor, highly coherent lasers and frequency combs using foundry-based technologies paves the way for volume manufacturing of a wide range of coherent optical systems.

Optics
Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

Mingming Jiang,Kai Xu,Peng Wan,Maosheng Liu,Daning Shi,Caixia Kan

DOI: https://doi.org/10.1039/d4tc03377a

IF: 6.4

2024-09-19

Journal of Materials Chemistry C

Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p-n junction device architectures are not efficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery mode (WGM) microlaser diode based on n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterostructure was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the proposed device exhibits remarkable double heterojunction (n-n-p) characteristics, enabling it to lasing in the ultraviolet spectral region, accompanied by an efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties with a threshold as low as 12.5 mA, and a high quality ( )-factor of approximately 1943. The carefully-designed double heterojunction enables superinjection of current, companied with efficient confinement of injected carriers and photons. In this case, the electron-hole recombination, lasing region, and population inversion zones coincide, which are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double heterojunction microlaser device could bring new technological opportunities to realize a high-performance lasers with low-threshold current, high -factor, distinct multiple-mode, and efficient suppression of spontaneous radiation driven by electrical excitation.

materials science, multidisciplinary,physics, applied
Low Threshold GaN-Based Microdisk Lasers on Silicon with High Q Factor

Yang Mei,Minchao Xie,Hao Long,Leiying Ying,Baoping Zhang

DOI: https://doi.org/10.1109/jlt.2022.3147803

IF: 4.7

2022-01-01

Journal of Lightwave Technology

Abstract:III-nitride-based microdisk lasers on Si offer the potential in large-scale monolithic Si-based photonic integrated circuits. Here, we demonstrate a new approach to fabricating III-nitride microdisk lasers on Si, which can avoid the problem of low crystal quality and large thickness in traditional Si-based photonic devices. The III-nitride membrane was grown on a sapphire substrate and then transferred to Si to fabricate the microdisk lasers; and an airgap undercut structure was realized by simply wet etching of a SiO 2 sacrificial layer. Devices fabricated by this method are free from the defect-rich layers that are unavoidable when grown directly on Si, resulting in a high quality (Q) value of 12543 at 412.9 nm. Room temperature lasing was demonstrated with a threshold energy density as low as 33.6 μJ/cm 2 . The whispering gallery mode oscillation was clearly observed and the model behavior was systematically investigated.

High Efficiency Raman Lasing in Integrated GaN Microresonators

Femtosecond Laser Direct Writing of High-Q Microresonators in Glass and Crystals

Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

Highly-efficient second and third harmonic generation in a monocrystalline lithium niobate microresonator.

Fabrication of Microresonators of High Q/V Ratios Using Femtosecond Laser Micromachining

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform

Integrated multi-color Raman microlasers with ultra-low pump levels in single high-Q lithium niobate microdisks

Raman Lasing in a Silica Microdisk Resonator

Low-Threshold Chip-Scale Aluminum Nitride Raman Laser

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Integrated Continuous-Wave Aluminum Nitride Raman Laser

InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

Integrated Gallium Nitride Microresonators for Broadband Kerr Comb Generation

One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

An integrated diamond Raman laser pumped in the near-visible

Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-$Q$ microresonators

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

Low Threshold GaN-Based Microdisk Lasers on Silicon with High Q Factor