Low-Threshold Chip-Scale Aluminum Nitride Raman Laser

Xianwen Liu,Changzheng Sun,Bing Xiong,Jian Wang,Lai Wang,Yanjun Han,Zhibiao Hao,Hongtao Li,Yi Luo,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang
2016-01-01
Abstract:Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ~1.2×106. The threshold pump power is ~8.7 mW, with unidirectional slope efficiency of ~5.1%. Raman frequency shifts of ~612 and ~657 cm-1 are observed for incident light with different polarization.
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