Fundamental Linewidth of an AlN Microcavity Raman Laser.

Kewei Liu,Shunyu Yao,Yulei Ding,Zihao Wang,Yanan Guo,Jianchang Yan,Junxi Wang,Changxi Yang,Chengying Bao
DOI: https://doi.org/10.1364/ol.466195
IF: 3.6
2022-01-01
Optics Letters
Abstract:Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived.
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