Abstract:Photonic integrated lasers with an ultra-low fundamental linewidth and a high output power are important for precision atomic and quantum applications, high-capacity communications, and fiber sensing, yet wafer-scale solutions have remained elusive. Here we report an integrated stimulated Brillouin laser (SBL), based on a photonic molecule coupled resonator design, that achieves a sub-100-mHz fundamental linewidth with greater than 10-mW output power in the C band, fabricated on a 200-mm silicon nitride (Si3N4) CMOS-foundry compatible wafer-scale platform. The photonic molecule design is used to suppress the second-order Stokes (S2) emission, allowing the primary lasing mode to increase with the pump power without phase noise feedback from higher Stokes orders. The nested waveguide resonators have a 184 million intrinsic and 92 million loaded Q, over an order of magnitude improvement over prior photonic molecules, enabling precision resonance splitting of 198 MHz at the S2 frequency. We demonstrate S2-suppressed single-mode SBL with a minimum fundamental linewidth of 71±18 mHz, corresponding to a 23±6-mHz2/Hz white-frequency-noise floor, over an order of magnitude lower than prior integrated SBLs, with an ∼11-mW output power and 2.3-mW threshold power. The frequency noise reaches the resonator-intrinsic thermo-refractive noise from 2-kHz to 1-MHz offset. The laser phase noise reaches -155 dBc/Hz at 10-MHz offset. The performance of this chip-scale SBL shows promise not only to improve the reliability and reduce size and cost but also to enable new precision experiments that require the high-speed manipulation, control, and interrogation of atoms and qubits. Realization in the silicon nitride ultra-low loss platform is adaptable to a wide range of wavelengths from the visible to infrared and enables integration with other components for systems-on-chip solutions for a wide range of precision scientific and engineering applications including quantum sensing, gravitometers, atom interferometers, precision metrology, optical atomic clocks, and ultra-low noise microwave generation.

Low-loss compact chalcogenide microresonators for efficient stimulated Brillouin lasers

Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Low-threshold Whispering-Gallery-mode Microlasers Fabricated in a Nd:glass Substrate by Three-Dimensional Femtosecond Laser Micromachining.

Narrow linewidth Brillouin laser based on chalcogenide photonic chip

Hybrid Chalcogenide‐Germanosilicate Waveguides for High Performance Stimulated Brillouin Scattering Applications

Demonstration of High-Performance, Sub-Micron Chalcogenide Glass Photonic Devices by Thermal Nanoimprint

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Low-Threshold and Sub-kHz-Linewidth Brillouin Laser Based on Chalcogenide Fiber at 2 $\mu$m

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

A mid-infrared Brillouin laser using ultra-high-Q on-chip resonators

Novel Ge-As-Se chalcogenide glass for potential high Brillouin gain coefficient of fiber

Integrated Waveguide Brillouin Laser

Nonlinear Optical Properties of Integrated GeSbS Chalcogenide Waveguides

Demonstration of High-Q Mid-Infrared Chalcogenide Glass-On-Silicon Resonators

Broadband Couplers for Hybrid Silicon-Chalcogenide Glass Photonic Integrated Circuits

High-power, low-noise Brillouin laser on a silicon chip

Silicon-Chip-Based Brillouin Lasers and Soliton Microcombs Using an Integrated Ultra-High-Q Silica Resonator

Sub-kilohertz intrinsic linewidth stimulated Brillouin laser in integrated lithium niobate microresonators

Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth

Optical investigation of chalcogenide glass for on-chip integrated devices

Cascaded stimulated Brillouin laser and Brillouin-Kerr optical frequency comb in high-Q MgF2 disk resonators