Abstract:Photonic integrated lasers with an ultra-low fundamental linewidth and a high output power are important for precision atomic and quantum applications, high-capacity communications, and fiber sensing, yet wafer-scale solutions have remained elusive. Here we report an integrated stimulated Brillouin laser (SBL), based on a photonic molecule coupled resonator design, that achieves a sub-100-mHz fundamental linewidth with greater than 10-mW output power in the C band, fabricated on a 200-mm silicon nitride (Si3N4) CMOS-foundry compatible wafer-scale platform. The photonic molecule design is used to suppress the second-order Stokes (S2) emission, allowing the primary lasing mode to increase with the pump power without phase noise feedback from higher Stokes orders. The nested waveguide resonators have a 184 million intrinsic and 92 million loaded Q, over an order of magnitude improvement over prior photonic molecules, enabling precision resonance splitting of 198 MHz at the S2 frequency. We demonstrate S2-suppressed single-mode SBL with a minimum fundamental linewidth of 71±18 mHz, corresponding to a 23±6-mHz2/Hz white-frequency-noise floor, over an order of magnitude lower than prior integrated SBLs, with an ∼11-mW output power and 2.3-mW threshold power. The frequency noise reaches the resonator-intrinsic thermo-refractive noise from 2-kHz to 1-MHz offset. The laser phase noise reaches -155 dBc/Hz at 10-MHz offset. The performance of this chip-scale SBL shows promise not only to improve the reliability and reduce size and cost but also to enable new precision experiments that require the high-speed manipulation, control, and interrogation of atoms and qubits. Realization in the silicon nitride ultra-low loss platform is adaptable to a wide range of wavelengths from the visible to infrared and enables integration with other components for systems-on-chip solutions for a wide range of precision scientific and engineering applications including quantum sensing, gravitometers, atom interferometers, precision metrology, optical atomic clocks, and ultra-low noise microwave generation.

Silicon-Chip-Based Brillouin Lasers and Soliton Microcombs Using an Integrated Ultra-High-Q Silica Resonator

Integrated Brillouin Laser with Sub-Milliwatt Threshold

Laser Soliton Microcombs Heterogeneously Integrated on Silicon

A silicon Brillouin laser

A mid-infrared Brillouin laser using ultra-high-Q on-chip resonators

Integrated Waveguide Brillouin Laser

High-power, low-noise Brillouin laser on a silicon chip

Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth

Brillouin-Kerr soliton frequency combs in an optical microresonator

Laser soliton microcombs on silicon

Soliton microcombs in silicon-carbide microresonators

Sub-hertz fundamental linewidth photonic integrated Brillouin laser

Soliton Frequency Comb at Microwave Rates in A High-Q Silica Microresonator

Integrated Turnkey Soliton Microcombs

Fabrication of the High-Q Si 3 N 4 Microresonators for Soliton Microcombs

Brillouin lasing in microspheres coupled with silicon subwavelength grating waveguides

Controllable Dual-Soliton Microcombs Using Brillouin Excitation

Integrated Ultra-High-Q Optical Resonator

Strong interactions between solitons and background light in Brillouin-Kerr microcombs

Soliton Microcombs Multiplexing Using Intracavity-Stimulated Brillouin Lasers

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-$Q$ microresonators