Abstract:In this Letter, trapping effects of a Schottky lightly Mg-doped p-GaN gate stack for low-power applications have been investigated, and further analysis focusing on AlGaN/GaN interface traps under γ-ray irradiation has been carried out. A negligible shift in the flatband voltage with γ-ray irradiation dose up to 800 krad indicates the superior radiation tolerance of the p-GaN gate structure. The difference between capacitance dispersion at the measurement frequency below and above 500 kHz is observed, which is attributed to trapping effects in different locations with varying gate voltage. Moreover, the frequency-dependent conductance method is put forward to assess the effects of different doses of γ-ray irradiation on the AlGaN/GaN interface traps. Based on that method, aside from the shallow trap states [the trap activation energy (ET) is about 0.334–0.338 eV] previously found in the traditional normally on high electron mobility transistor (HEMT), another type of deeper trap states at the AlGaN/GaN interface (ET is about 0.467–0.485 eV) is detected. It is observed that the ET of shallow trap states distributes at a deeper and broader range as the irradiation dose increases. Additionally, the trap density decreased after 600 krad doses irradiation but increased after 800 krad doses irradiation for both deep and shallow ET. Transmission electron microscopy and atomic force microscopy are used to demonstrate the smooth AlGaN/GaN interface morphology, which will not be greatly damaged after 800 krad doses of γ-ray irradiation. This work can provide a further understanding of radiation tolerance and trapping effects of p-GaN gate HEMTs for low-voltage applications.

Location Identify of EC-0.9 Ev Trap in AlGaN/GaN High Electron Mobility Transistors

Investigation of proton irradiation induced E<sub>C</sub>-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Investigation of Trapping Effects in Schottky Lightly Doped P-GaN Gate Stack under Γ-Ray Irradiation

Effects of Low-Energy Electron Irradiation on Enhancement-Mode Algan/Gan High-Electron-Mobility Transistors

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs

Investigation of Traps in HVPE Grown β-Ga2O3 Epilayers/n+-Ga2O3 using Deep Level Transient Spectroscopy

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures