Abstract:In this paper, a gallium nitride (GaN) vertical superjunction (SJ) MOSFET with trench gate is proposed and studied by the TCAD simulation. In order to achieve the typical electric field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field) modulation effect by the P + /N/N + structure in the conventional Si SJ-MOS, the P-GaN/unintentional doped (UID)-GaN/N + -GaN stack is alternatively used by taking into account the unavailability of P + -GaN. In this manner, the P-GaN and N + -substrate serve as the field-stop (FS) layers in the proposed GaN SJ-MOS. In the forward bias, the enhancement-mode function of the device is enabled by the gated side-wall and aperture composite channel that leads to a 1.47-V threshold voltage of the device. In the reverse bias, the breakdown of the device is governed by two mechanisms: 1) the punchthrough (PT) in the top P-GaN/N-drift junction due to the possible under design of the P-GaN thickness; 2) the avalanche breakdown triggered by high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field due to the possible under design of the bottom UID-GaN thickness. Hence, from the uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution point of view, a device optimization approach for GaN vertical SJ-MOS is proposed. The hole and electron densities of P-GaN and N-drift are optimized to achieve a uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution in the device both in the lateral and vertical directions, which is found to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6 \times 10^{16}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-3}$ </tex-math></inline-formula> . Moreover, the thickness ratio of P-GaN/UID-GaN is designed to obtain an identical intrinsic breakdown for the top P-GaN/N-drift junction and bottom UID/N-drift region, which enables the maximum Baliga’s figure-of-merit (BFOM) of the device. The concept of device design and optimization is of great interests for GaN vertical device for over kilovolts applications.

High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Normally-off trench JFET technology in 4H silicon carbide

A Novel Kilovolts GaN Vertical Superjunction MOSFET With Trench Gate: Approach for Device Design and Optimization

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

GaN Based Vertical Transistors on GaN Substrates

Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

GaN HEMTs on Low Resistivity Si Substrates with Thick Buffer Layers for RF Signal Amplification and Power Conversion

High performance Ge-pMOSFET integrated on Si platform

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

900 V/1.6 Normally Off MOSFET on Silicon Substrate

High-Performance E-Mode <i>p</i>-Channel GaN FinFET on Silicon Substrate With High <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> and High Threshold Voltage

High-Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN-on-Si MISFETs with 626 MW/<inline-formula> &Lt;tex-Math Notation="latex">$\mathrm{cm}^{2}$ &Lt;/tex-Math></inline-formula> Figure of Merit

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

702.3 A.cm(-2)/10.4 m Omega.cm(2) Vertical beta-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

Trench Gate β-Ga2O3 MOSFETs: A Review

The GaN Trench Gate MOSFET with Floating Islands

4H-SiC trench gate MOSFETs with field plate termination