High-Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN-on-Si MISFETs with 626 MW/<inline-formula> ≪tex-Math Notation="latex">$\mathrm{cm}^{2}$ ≪/tex-Math></inline-formula> Figure of Merit

Qi Zhou,Bowen Chen,Yang Jin,Sen Huang,Wei Ke,Bin Xu,Jinyu Mou,Bo Zhang

DOI: https://doi.org/10.1109/ted.2014.2385062

2015-01-01

Abstract:In this paper, the partial gate recess for performance improvement of enhancement-mode (E-mode) GaN power devices is experimentally demonstrated. The gate recess with a careful control of the recess depth was performed with an optimized recessed barrier thickness of ~1.5 nm that is thin enough to completely deplete the 2-D electron gas channel in the gate region. Meanwhile, the remaining barrier preserves the as-grown quantum well of the heterostructure physically intact and thus, effectively mitigates the lattice damage caused by gate recess. The fabricated E-mode Al 2 O 3 /AlGaN/GaN MISFETs deliver a threshold voltage (V TH ) of +1.5 V. The maximum drain current density (I D,max ) and transconductance (G m,max ) are 693 mA/mm and 166 mS/mm, respectively. The MISFETs with an L GD of 10 μm feature an OFF-state breakdown voltage of 860 V at a leakage current of 1 μA/mm. The corresponding specific ON-resistance (R ON,sp ) is as low as 1.18 mΩ·cm 2 yielding a high-power figure of merit of 626 MW/cm 2 . In comparison with the reference MOSFETs by fully gate recess, the respectably improved device performance of the MISFETs attributes to the enhanced electron mobility achieved by the partial gate recess.