Abstract:This review highlights Al1−xScxN as a groundbreaking wurtzite ferroelectric with exceptional properties, including large polarization, tunable coercive field, outstanding thermal stability, and compatibility with CMOS/III‐N technologies. It explores the origins of its ferroelectricity, phase stability, and control mechanisms, discusses challenges such as high operating voltages and leakage currents, and outlines future development directions, emphasizing its potential for advanced applications. Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 μC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−1), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable compatibility with both CMOS and III‐N technologies. It can be fabricated on plastic substrates at low temperatures, demonstrating excellent flexibility and biocompatibility. Remarkably, Al1−xScxN maintains superior performance in harsh environments due to its outstanding thermal stability (up to 1100 °C). These unique characteristics position Al1−xScxN as a highly promising candidate for a wide range of applications, including high‐performance memory, in‐memory computing, neuromorphic computing, and next‐generation wearable and implantable devices, particularly for operation in complex environments. Despite its potential, Al1−xScxN faces challenges such as high coercive fields, significant leakage currents, and limited polarization reversal cycle life. Addressing these challenges require a deeper understanding of the fundamental physics controlling Al1−xScxN films. This review explores the origins of Al1−xScxN's ferroelectricity and phase stability, delves into the fundamental theory of wurtzite ferroelectricity, investigates mechanisms for controlling spontaneous polarization and coercive fields, examines recent research progress in Al1−xScxN ferroelectric devices, and outlines future development directions for this exciting material.

Bipolar and Unipolar Cycling Behavior in Ferroelectric Scandium-doped Aluminum Nitride

Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN

Examining the ferroelectric characteristics of aluminum nitride‐based thin films

Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study

Domain Dynamics and Resistive Switching in Ferroelectric Al1–xScxN Thin Film Capacitors

Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics

Molecular dynamics simulations on ferroelectricity of AlN thin films

Piezoelectric effect and polarization switching in Al$_{1-x}$Sc$_x$N

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition

AlScN: A III-V semiconductor based ferroelectric

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing

Integration of Ferroelectric Al 0.8 Sc 0.2 N on Si (001) Substrate

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics

Doping effects on the ferroelectric properties of wurtzite nitrides

Defects and oxygen impurities in ferroelectric wurtzite Al1− x Sc x N alloys

Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films

Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films

Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current