Abstract:Conclusion In summary, our study has achieved successful growth of a ferroelectric Al 0.65 Sc 0.35 N film using the PVD method. The fabricated capacitors have demonstrated a coercive field of 2.70 MV/cm as well as an impressively large remnant polarization of 143 μC/cm 2 . Significantly, we have set a benchmark by achieving a remarkable 5 × 10 7 switching cycle without observable substantial degradation. This advancement represents a promising way to enhance fatigue resistance, which could push forward the practical applications of this technology in non-volatile, low-power, intelligent, and reconfigurable electronics.

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition