High-performance III-V/Si3N4 O-band External Cavity Tunable Laser

Yuyao Guo,Xinhang Li,Minhui Jin,Chuxin Liu,Weihan Xu,Liangjun Lu,Jingya Xie,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/cleo_si.2022.sm2p.5

2022-01-01

Abstract:We present a III-V/Si 3 N 4 O-band hybrid laser, which shows a high output power of 42 mW, wide tuning range of 62 nm with side-mode suppression ratio >50 dB, and narrow intrinsic linewidth of ~600 Hz.

What problem does this paper attempt to address?

A hybrid-integrated external cavity laser with ultra-wide wavelength tuning range and high side-mode suppression

Yuyao Guo,Xinhang Li,Weihan Xu,Chuxin Liu,Minhui Jin,Liangjun Lu,Jingya Xie,Anton Stroganov,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/ofc.2022.tu3d.4

2022-01-01

Abstract:We present a III-V/Si3N4 hybrid-integrated tunable laser. The laser shows a record of similar to 170-nm tuning range with a side mode suppression ratio above 64 dB and an intrinsic linewidth below 2.8 kHz. (C) 2022 The Author(s)
Thermally Tuned High-Performance III-VSi3N4 External Cavity Laser

Yuyao Guo,Ruiling Zhao,Gangqiang Zhou,Liangjun Lu,Anton Stroganov,Muhammad Nisar,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1109/JPHOT.2021.3068529

IF: 2.4

2021-01-01

IEEE Photonics Journal

Abstract:Silicon nitride (Si3N4) has a higher nonlinear threshold compared to silicon, which reduces the effect of two-photon absorption. However, the low thermo-optic coefficient and the reduced refractive index contrast of thin Si3N4 waveguides lead to a low thermal tuning speed and low thermal efficiency. This paper demonstrates a widely tunable III-Vx002F;Si3N4 hybrid-integrated external cavity laser with a relatively faster switching time. The Si3N4 external feedback circuit is based on 800-nm-thick Si3N4 waveguides with an optical confinement factor of 87x0025;. It allows the reduction of the oxide under-cladding layer thickness to 4 x03BC;m and the oxide upper-cladding layer to 1.7 x03BC;m without additional loss. The switching time between two non-adjacent lasing wavelengths is 60.7 x03BC;s. The maximum output power is 34 mW under 500 mA injection current. The side mode suppression ratio is more than 70 dB over the tuning range of 58.5 nm. The laser intrinsic linewidth is 2.5 kHz.
1.9 μm hybrid silicon/iii-v semiconductor laser

po dong,t c hu,leiqi zhang,m dinu,r f kopf,atsushi tate,l l buhl,d t neilson,xiaohua luo,tsungyang liow,guoqiang lo,yenkuang chen

DOI: https://doi.org/10.1049/el.2013.0674

2013-01-01

Electronics Letters

Abstract:A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.
Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Jia Xu Brian Sia,Xiang Li,Wanjun Wang,Zhongliang Qiao,Xin Guo,Jin Zhou,Callum G. Littlejohns,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.400666

IF: 3.8

2020-01-01

Optics Express

Abstract:The wavelength region about of 1650 nm enables pervasive applications. Some instances include methane spectroscopy, free-space/fiber communications, LIDAR, gas sensing (i.e. C2H2, C2H4, C3H8), surgery and medical diagnostics. In this work, through the hybrid integration between an III-V optical amplifier and an extended, low-loss wavelength tunable silicon Vernier cavity, we report for the first time, a III-V/silicon hybrid wavelength-tunable laser covering the application-rich wavelength region of 1647-1690 nm. Room-temperature continuous wave operation is achieved with an output power of up to 31.1 mW, corresponding to a maximum side-mode suppression ratio of 46.01 dB. The laser is ultra-coherent, with an estimated linewidth of 0.7 kHz, characterized by integrating a 35 km-long recirculating fiber loop into the delayed self-heterodyne interferometer setup. The laser linewidth is amongst the lowest in hybrid/heterogeneous III-V/silicon lasers.
Edge-coupled III-V/Si 3 N 4 hybrid external cavity laser

Yuyao Guo,Linjie Zhou,Gangqiang Zhou,Ruiling Zhao,Liangjun Lu,Jianping Chen

DOI: https://doi.org/10.1109/ICOCN.2019.8934053

2019-01-01

Abstract:We demonstrated an III-V/silicon nitride hybrid external cavity laser (ECL). The ECL exhibits a tuning range of 45 nm, a side-mode suppression ratio (SMSR) of 60 dB, and a linewidth of round 100 kHz.
Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Chen Chen,Fang Wei,Xiuyou Han,Qingshuai Su,Haoyang Pi,Guofeng Xin,Huimin Wu,Anton Stroganov,Yanguang Sun,Weijie Ren,Xiao Chen,Qing Ye,Haiwen Cai,Weibiao Chen

DOI: https://doi.org/10.1364/OE.487850

2023-07-31

Abstract:We have designed and fabricated a hybrid integrated laser source with full C-band wavelength tunability and high-power output. The external cavity laser is composed of a gain chip and a dual micro-ring narrowband filter integrated on the silicon nitride photonic chip to achieve a wavelength tuning range of 55 nm and a SMSR higher than 50 dB. Through the integration of the semiconductor optical amplifier in the miniaturized package, the laser exhibits an output power of 220 mW and linewidth narrower than 8 kHz over the full C-band. Such a high-power, narrow-linewidth laser diode with a compact and low-cost design could be applied whenever coherence and interferometric resolutions are needed, such as silicon optical coherent transceiver module for space laser communication, light detection and ranging (LiDAR).
Integrated electro-optically tunable narrow-linewidth III-V laser

Yiran Zhu,Shupeng Yu,Zhiwei Fang,Difeng Yin,Jian Liu,Zhe Wang,Yuan Zhou,Yu Ma,Haisu Zhang,Min Wang,Ya Cheng

2023-11-26

Abstract:We demonstrate an integrated electro-optically tunable narrow-linewidth III-V laser with an output power of 738.8 {\mu}W and an intrinsic linewidth of 45.55 kHz at the C band. The laser cavity is constructed using a fiber Bragg grating (FBG) and a tunable Sagnac loop reflector (TSLR) fabricated on thin film lithium niobate (TFLN). The combination of the FBG and the electro-optically tunable TSLR offers the advantages of single spatial mode, single-frequency, narrow-linewidth, and wide wavelength tunability for the electrically pumped hybrid integrated laser, which features a frequency tuning range of 20 GHz and a tuning efficiency of 0.8 GHz/V.

Optics,Applied Physics
Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Ruiling Zhao,Yuyao Guo,Liangjun Lu,Muhammad Shemyal Nisar,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/OE.416398

2021-03-29

Abstract:We present a hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability. Two parallel reflective semiconductor optical amplifier gain channels are combined by a Y-branch in the Si3N4 photonic circuit to increase the optical gain. A Vernier ring filter is integrated in the Si3N4 photonic circuit to select a single longitudinal mode and meanwhile reduce the laser linewidth. The side-mode suppression ratio is ∼67 dB with a pump current of 75 mA. The linewidth of the unpackaged laser is 6.6 kHz under on-chip output power of 23.5 mW. The dual-gain operation of the laser gives higher output power and narrower linewidth compared to the single gain operation. It is promising for applications in optical communications and light detection and ranging systems.
Hybrid External Cavity Laser with a 160-Nm Tuning Range

Yuyao Guo,Linjie Zhou,Gangqiang Zhou,Ruiling Zhao,Liangjun Lu,Jianping Chen

DOI: https://doi.org/10.1364/cleo_si.2020.stu3m.2

2020-01-01

Abstract:We present a hybrid laser by using an InP reflective semiconductor optical amplifier chip butt-coupled with a SiN tunable reflector chip. The laser wavelength tuning range is 160 nm and the linewidth is 30 kHz.
FMCW Source based on a Hybrid Integrated III-V/ Si-Si3N4 Dual-Layer External Cavity Laser

Xinhang Li,Yuyao Guo,Chuxin Liu,Xin Li,Minhui Jin,E Siyu,Weihan Xu,Liangjun Lu,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/cleo_si.2022.sm2p.7

2022-01-01

Abstract:We demonstrate a hybrid integrated frequency-modulated continuous-wave laser on a Si-Si3N4 dual-layer platform with 21.9 mW output power, >56.5 dB side mode suppression ratio, >100 nm tuning range, and 895 Hz intrinsic linewidth.
Hybrid integrated Si_3N_4 external cavity laser with high power and narrow linewidth

Chen Chen,Fang Wei,Xiuyou Han,Qingshuai Su,Haoyang Pi,Guofeng Xin,Huimin Wu,Anton Stroganov,Yanguang Sun,Weijie Ren,Xiao Chen,Qing Ye,Haiwen Cai,Weibiao Chen,qing ye

DOI: https://doi.org/10.1364/oe.487850

IF: 3.8

2023-07-22

Optics Express

Abstract:Chen Chen, Fang Wei, Xiuyou Han, Qingshuai Su, Haoyang Pi, Guofeng Xin, Huimin Wu, Anton Stroganov, Yanguang Sun, Weijie Ren, Xiao Chen, Qing Ye, Haiwen Cai, Weibiao Chen We have designed and fabricated a hybrid integrated laser source with full C-band wavelength tunability and high-power output. The external ... [Opt. Express 31, 26078-26091 (2023)]

optics
FMCW Source based on a Hybrid Integrated III-V/ Si-Si<inf>3</inf>N<inf>4</inf> Dual-Layer External Cavity Laser

Xinhang Li,Yuyao Guo,Chuxin Liu,Xin Li,Minhui Jin,Siyu E,Weihan Xu,Liangjun Lu,Jianping Chen,Linjie Zhou

2022-01-01

Abstract:We demonstrate a hybrid integrated frequency-modulated continuous-wave laser on a Si-Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> dual-layer platform with 21.9 mW output power, >56.5 dB side mode suppression ratio, >100 nm tuning range, and 895 Hz intrinsic linewidth.
Hybrid integrated external cavity laser with a 172-nm tuning range

Yuyao Guo,Xinhang Li,Minhui Jin,Liangjun Lu,Jingya Xie,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1063/5.0088119

IF: 5.6

2022-01-01

APL Photonics

Abstract:Chip-scale lasers with a wide tunable range and a narrow linewidth have rich applications in optical communications, sensing, and light detection and ranging systems. External cavity lasers (ECLs) have the advantage of a wide tuning range and a narrow linewidth compared with their counterparts such as distributed feedback lasers and distributed Bragg reflector lasers because the passive filter separated from the gain section can be widely tuned and the low-loss external cavity extends the photon lifetime. However, so far, the tuning range achieved by the chip-scale ECLs is in the range of 80-120 nm, smaller than that of the bulk free-space ECL (typically > 160 nm). The bottleneck in reaching an ultrabroad tuning range for chip-scale ECLs lies in the unsuppressed side modes of the external cavity. Here, we demonstrate a hybrid-integrated ECL consisting of a broadband III-V reflective semiconductor optical amplifier and a low-loss Si3N4 wavelength-selective reflector. A record 172-nm lasing wavelength tuning range together with a more than 40 dB side-mode suppression ratio is achieved beyond the free spectral range of the Vernier ring filter due to the enhanced lasing mode selection from a tunable Sagnac loop reflector. The Si3N4 platform enables a low-loss external cavity, facilitating laser linewidth reduction below 4 kHz over the full tuning range. The on-chip output power reaches 26.7 mW at a wavelength of 1550 nm. (C) 2022 Author(s).
Hybrid InP-Si3N4 Tunable External Cavity Laser Achieving an Ultra-low Intrinsic Linewidth below 10 Hz

Yilin Wu,Shuai Shao,Sigang Yang,Hongwei Chen,Hui Wang,Minghua Chen

DOI: https://doi.org/10.1364/cleo_at.2024.jth2a.88

2024-01-01

Abstract:A hybrid InP-Si3N4 tunable external cavity laser is demonstrated. It achieves an ultra-low intrinsic linewidth below 10 Hz over the full C-band, featuring a record lowest value of 6.06 Hz.
40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Tize Li,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1088/1742-6596/844/1/012013

2017-01-01

Abstract:Full band quasi-continuous wavelength tuning with similar to 36dB side mode suppression ratio of V-cavity semiconductor laser is reported. A simple and general tuning algorithm employing only two electrodes to control the frequency combs shifting synchronously is presented and demonstrated, respectively.
Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

Yin Wang,Sen Zhang,Youguang Yang,Lei Wang,Jian-Jun He

2012-01-01

Abstract:We present the design, fabrication and measurement results of a narrow Iinewidth single-mode laser based on three coupled cavities with two deeply etched trenches. Very narrow Iinewidth of about 78kHz is obtained. Good performances in lasing threshold and side-mode suppression ratio (SMSR) are also demonstrated.
III-V/Si Hybrid External-Cavity Laser Utilizing TM Mode in the Passive Photonic Circuit.

Yuyao Guo,Xinhang Li,Minhui Jin,Liangjun Lu,Jingya Xie,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.23919/oecc/psc53152.2022.9850199

2022-01-01

Abstract:We present a III-V/Si hybrid laser using the silicon waveguide TM mode to reduce the propagation loss, backscattering, and two-photon absorption. The TM-mode laser has superior performance than the TE-mode laser.
Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Zhanyi Wang,Jingli Gong,Jian-Jun He,Lu Li,Rui Q. Yang,James A. Gupta

DOI: https://doi.org/10.1364/ol.391308

IF: 3.6

2020-01-01

Optics Letters

Abstract:We demonstrate widely tunable single-mode V-coupled-cavity lasers emitting at wavelengths near 3 µm based on a type-II interband cascade (IC) structure. The mode selection is achieved using a half-wave V-coupler designed for the IC structure in the mid-infrared range. The laser waveguides and cavity structure are deeply etched in a single etching step, without any grating. By changing the injection current at a fixed heat-sink temperature, a tuning range over 35 nm can be achieved with a side-mode suppression-ratio up to 28 dB. The tuning range can be extended to 60 nm when combined with the adjustments of the heat-sink temperature.
Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.383524

IF: 3.8

2020-01-01

Optics Express

Abstract:In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H2O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.
Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Zecen Zhang,Callum Littlejohns,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/cleo_si.2019.stu4o.1

2019-01-01

Abstract:We present the first MIR hybrid Si external cavity laser with a tunable range below the 2 μm mark. To the best of our knowledge, we have achieved the largest tunable range of 66 nm (1881–1947 nm) near the 2 μm waveband in silicon photonics. © 2019 The Author(s)

High-performance III-V/Si3N4 O-band External Cavity Tunable Laser

A hybrid-integrated external cavity laser with ultra-wide wavelength tuning range and high side-mode suppression

Thermally Tuned High-Performance III-VSi<sub>3</sub>N<sub>4</sub> External Cavity Laser

1.9 μm hybrid silicon/iii-v semiconductor laser

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Edge-coupled III-V/Si 3 N 4 hybrid external cavity laser

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Integrated electro-optically tunable narrow-linewidth III-V laser

Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Hybrid External Cavity Laser with a 160-Nm Tuning Range

FMCW Source based on a Hybrid Integrated III-V/ Si-Si3N4 Dual-Layer External Cavity Laser

Hybrid integrated Si_3N_4 external cavity laser with high power and narrow linewidth

FMCW Source based on a Hybrid Integrated III-V/ Si-Si<inf>3</inf>N<inf>4</inf> Dual-Layer External Cavity Laser

Hybrid integrated external cavity laser with a 172-nm tuning range

Hybrid InP-Si3N4 Tunable External Cavity Laser Achieving an Ultra-low Intrinsic Linewidth below 10 Hz

40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

III-V/Si Hybrid External-Cavity Laser Utilizing TM Mode in the Passive Photonic Circuit.

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)