Abstract:An evanescently-coupled, hybrid InGaAsP-Si laser operating at 1.55 mu m is presented by selective area metal bonding (SAMB). The III-V laser, fabricated on a p-InP substrate with a semi-insulating InP: Fe buried heterostructure (BH), serves to provide optical gain. On the SOI wafer, a 3-mu m wide and 500-nm high Si waveguide is formed and the bonding metal (AuSn alloy) is selectively deposited in the regions 6 mu m away from the Si waveguide on each side. The InGaAsP gain structure is flip-chip bonded onto the patterned SOI wafer using SAMB method which separates laterally the optical coupling area and the metal bonding area to avoid strong light absorption by the bonding metal. The hybrid laser runs with a maximum single-sided output power of 9 mw at room temperature. The slope efficiency of the hybrid laser is about 0.04 W/A, 4 times that of the laser before bonding which indicates that the light confinement is improved after the bonding. The hybrid laser has achieved 10 degrees C contimuous wave (CW) lasing. A near-field image of the hybrid laser is studied. As the inject current increases, the light spot markedly shifts down to the Si waveguide and covers the Si waveguide region, which demonstrates that the light generated in the III-V active region is coupled into the Si waveguide. This method allows for different III-V devices to be bonded onto any desired places on a SOI substrate. The simplicity and flexibility of the fabrication process and high yield make the hybrid laser a promising light source.

III-V/Si Hybrid External-Cavity Laser Utilizing TM Mode in the Passive Photonic Circuit.

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

1.9 μm hybrid silicon/iii-v semiconductor laser

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Single-mode Topological Valley-Hall Laser Via Spatially Distributed Injection

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Scalable single-microring hybrid III-V/Si lasers for emerging narrow-linewidth applications

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Novel integration technique for silicon/III-V hybrid laser

Hybrid integrated Si_3N_4 external cavity laser with high power and narrow linewidth

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

Complementary-Tuning-Enabled Hybrid III-V/Si3N4 Dual External Cavity Laser Combines Wide Tunability and Frequency Agility

Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

Hybrid integrated InGaAsP-Si laser using selective area metal bonding method for optical interconnection

Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm