Abstract:Within the framework of the dielectric-continuum model, the equations of motion for p-polarization field in wurtzite quantum well are solved for the propagating optical phonon modes. The polarization eigenvector and the dispersion relation are derived by using the determinate method. The dispersion relation and phonon modes properties of the propagating optical phonons are investigated for GaN/AlN single QW. The numerical results show that the propagating phonons have a quantization character by a quantum number n that define its order. The propagating optical phonons are more dispersive for decreasing n, and the bands formed by the dispersion curves are narrower for higher order modes. The wave vector and width of quantum well have more important effect on phonon energy, with the increase of wave vector or width of quantum well, the energy of propagating optical phonon modes decrease in TO domain (between A(1) (TO) and E(1) (TO) frequency of GaN), and increase in LO domain (between GaN A(1) (LO) and E(1) (LO) frequency of GaN). The strain effects of QW structures have clear influence on the dispersion behavior of propagating optical phonons. The frequency of the propagating optical phonon modes is increased due to the strains of the QW structure.

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Raman-based Measurement of Carrier Concentration in N-Type ZnO Thin Films under Resonant Conditions

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

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Effect of Fe-doping on Nonlinear Optical Responses and Carrier Trapping Dynamics in GaN Single Crystals

Infrared Spectrum of GaN1-xPx Ternary Alloy

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Characterization of GaN Grown on 4H-Sic and Sapphire by Raman Spectroscopy and High Resolution XRD

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Optical property studies of GaN films grown by MOCVD

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Infrared studies of GaN1-xPx ternary alloys

Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction