Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Carrier Concentration and Mobility in GaN Epilayers on Sapphire Substrate Studied by Infrared Reflection Spectroscopy

Study on the Carrier Concentration in N-Gaas Homojunction Multilayer Structures by Reflection Spectroscopy

Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS

Can Interference Patterns in the Reflectance Spectra of Gan Epilayers Give Important Information of Carrier Concentration?

Probing Carrier Concentration of Doped GaN Single Crystals from LO Phonon-Plasmon Coupled Modes

Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Optical property studies of GaN films grown by MOCVD

Carrier Transport and Optical Properties in Gaas Far-Infrared/Terahertz Mirror Structures

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Carrier Density Imaging of Lateral Epitaxially Overgrown Gan Using Scanning Confocal Raman Microscopy

High electron mobility in free-standing GaN substrates

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Optical properties of GaN film grown by metalorganic chemical vapor deposition

Photoreflectance Study of GaN Films on Sapphire Substrate

Mosaic Structure and Its Influence on Carrier Mobility in Undoped Hexagonal GaN Thin Film

Raman Investigation on the Surface Carrier Concentration of Single GaN Microrod Grown by MOCVD

Optical Characterization of GaN Films by Photoreflectance and Photocurrent Measurement