Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Optical Characterization of GaN Films by Photoreflectance and Photocurrent Measurement

Photoreflectance Study of GaN Films on Sapphire Substrate

Optical Characterization of GaN Films Grown on (0001) Sapphire Substrate

Optical properties of GaN film grown by metalorganic chemical vapor deposition

Optical property studies of GaN films grown by MOCVD

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Photoreflectance Study of Gan Film Grown by Metalorganic Chemical Vapor Deposition

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Study of Transient Photoconductivity of Gan Epilayer Grown by Metalorganic Chemical Vapor Deposition

Structural and Photoluminescence Characterization of GaN Film Grown on Si (111) Substrate

Study of Gan Thin Films Grown on Vicinal Sic (0001) Substrates by Molecular Beam Epitaxy

Study of InGaN Films Grown by MOCVD

Transient Photoconductivity of GaN Thin Film on Sapphire Substrate

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime.