Normally-Off High-Performance Diamond FET with Large $\textit{v}_{\text{th}}$ and Low Leakage Current
Yuesong Liang,Wei Wang,Tianlin Niu,Genqiang Chen,Fei Wang,Yuxiang Du,Minghui Zhang,Yanfeng Wang,Feng Wen,Hong-Xing Wang
DOI: https://doi.org/10.1109/ted.2024.3496447
IF: 3.1
2024-01-01
IEEE Transactions on Electron Devices
Abstract:A normally-off high-performance hydrogenated diamond (H-diamond) field-effect transistor (FET) has been fabricated and investigated. The deep X-ray photoelectron spectroscopy (XPS) analysis reveals the Gd $_{\text{2}}$ O $_{\text{3}}$ /Gd double layer gate structure. The threshold voltage ( $\textit{V}_{\text{TH}}$ ) is up to $-$ 1.4 V with 6- $\mu$ m gate length, which demonstrates the normally-off operation caused by the low work function of Gd and the fixed positive charge of Gd $_{\text{2}}$ O $_{\text{3}}$ layer. The gate leakage current density J is as low as 5.8 $\times$ 10 $^{-\text{6}}$ A/cm $^{\text{2}}$ and ON/OFF ratio is as high as 10 $^{\text{10}}$ , which both can be due to the suppression by Gd $_{\text{2}}$ O $_{\text{3}}$ layer. The maximum drain current density, transconductance, OFF-state drain leakage current, subthreshold swing, maximum gate oxide capacitance, and effective mobility with 6- $\mu$ m gate length are $-$ 100 mA/mm, 18.9 mS/mm, 10 $^{-\text{8}}$ mA/mm, 121 mV/dec, 0.24 $\mu$ F/cm $^{\text{2}}$ , and 417.7 cm $^{\text{2}}$ /V $\cdot$ s, respectively. The trapped charge density, fixed charge density, and interface state density are 4.87 $\times$ 10 $^{\text{11}}$ cm $^{-\text{2}}$ , 3.57 $\times$ 10 $^{\text{12}}$ cm $^{-\text{2}}$ , and 1.52 $\times$ 10 $^{\text{12}}$ cm $^{-\text{2}}\cdot$ eV $^{-\text{1}}$ , respectively. This work demonstrates a simple fabrication approach to achieve normally-off FET with large $\textit{V}_{\text{TH}}$ and low leakage current, which contributes to the advancement of diamond for circuit applications.