Abstract:The development of monolithic integrated energy-efficient complementary circuits is crucial for the large-scale application of wide bandgap semiconductor-based high-frequency and high-power field-effect transistors (FETs). However, the inferior performance of p-channel FETs attributed to low hole density and mobility presents a substantial challenge. Diamond is a promising candidate due to its excellent comprehensive electrical properties and high thermal conductivity. Here, we report the fabrication of normally off diamond FETs based on a low work function metal gate and (110) hydrogen-terminated diamond with high hole density. The use of high-quality SiO2 layer ensures the complete depletion of the channel by the gate and offers high gating efficiency. Therefore, the developed devices demonstrate exceptional reproducibility of normally off characteristics with centrally distributed threshold voltages (-0.37 ± 0.3 V) and realize large current and voltage handling capabilities and low static standby power consumption in a synergic manner with record-high on/off ratio exceeding 1010, high current density (∼200 μA·μm-1), ultralow off-state current (∼fA·μm-1), and high breakdown voltage (-676 V). Additionally, the thermal desorption of negatively charged acceptors has been proven to significantly reduce carrier scattering. This work offers superior performance p-channel FETs for implementing energy-efficient complementary circuits, laying the groundwork for accelerated development in wide bandgap semiconductor power electronics.

An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor with Lanthanum Hexaboride Gate Material

Performance of hydrogen-terminated diamond MOSFET with LaB<sub>6</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric

Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with $V_{th} < -6V$ and High On-Current

High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

Large V TH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation

Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Small Subthreshold Swing Diamond Field Effect Transistors with SnO2 Gate Dielectric

High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

High performance ionic-liquid-gated air doped diamond field-effect transistors

Dipole-induced Modulation of Effective Work Function of Metal Gate in Junctionless FETs

Gaas Enhancement-Mode Nmosfets Enabled By Atomic Layer Epitaxial La1.8y0.2o3 As Dielectric