Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor with Ferroelectric HfZrOx/Al2O3Gate Dielectrics

Kai Su,Zeyang Ren,Yue Peng,Jinfeng Zhang,Jincheng Zhang,Yachao Zhang,Qi He,Chunfu Zhang,Yue Hao

DOI: https://doi.org/10.1109/access.2020.2968742

IF: 3.9

2020-01-01

IEEE Access

Abstract:A hydrogen-terminated diamond (H-diamond) Field effect transistor (FET) with a ferroelectric HfZrOx/Al2O3 stacked gate dielectric was demonstrated for the first time. The HfZrOx(16 nm)/Al2O3(4 nm) gate dielectric was grown by atomic layer deposition (ALD) at 300 °C. The bowknot-like capacitance-voltage hysteresis and the transfer characteristic curves in clockwise hysteresis loop directly illustrated the ferroelectricity of the device. A memory window as wide as 7.3-9.2 V, the maximum on/off ratio of 109 and the subthreshold slope (SS) of about 58 mV/decade was measured for the gate voltage sweeping between 10.0 to -10.0 V in the linear region. A completely normally-off behavior was observed in the saturation region because both threshold voltages (Vth 's) for forward and reverse sweeping transfer characteristic curves are negative at a drain voltage of -15 V. It is ascribed to that the polarization state of the HfZrOx dielectric along the channel changes from uniform in the linear region to strongly nonuniform in the saturation region. These results hint that HfZrOx/Al2O3/H-diamond FETs provide new possibility of diamond normally-off FETs, negative capacitance FETs and non-volatile memory of high density integration.