Abstract:SiC, as one typical 3rd generation semiconductor, has high potential to be used as the substrate for harsh environment sensors. However, the etching of this material is still challenging. Femtosecond laser has been demonstrated to have great potential in SiC etching, but the material removal mechanisms need further investigation. Herein, the two-temperature model considering carrier concentration is utilized to illustrate the microscopic mechanism of carrier concentration and temperature change in SiC caused by femtosecond laser irradiation. An 800 nm, 50 fs, 10 Hz Ti: sapphire femtosecond laser was used to process SiC in different media including air, HF and water. The ablation threshold of SiC in the three media is calculated. The highest ablation threshold (4.98 J/cm(2)) is obtained when the pulse number N = 50, in air. The lowest ablation threshold (0.53 J/cm(2)) is obtained when the pulse number N = 300, in HF. Results indicate that ablation threshold is strongly dependent on the laser pulse number and processing medium. Based on the cleavage phenomenon of SiC crystal structure observed by micro-nano characterization, the mechanism model of femtosecond laser-induced periodic structure of SiC surface based on material lattice cleavage is established, and the relationship between the intrinsic texture and the evolution of periodic structure of ablation surface is revealed. This will provide a new way to understand the ablation mechanism of femtosecond laser. In addition, the processing media has significant effect on surface roughness and chemical bond characteristics of SiC. Liquid processing media can reduce the surface roughness and avoid oxidation, which is helpful to manufacture SiC devices with specific surface requirements using femtosecond laser as an auxiliary method.

Laser Ablation Behavior of RB-SiC by Femtosecond Laser Irradiation

Laser ablation of RB-SiC composite by femtosecond laser irradiation

Crystal Cleavage, Periodic Nanostructure And Surface Modification Of Sic Ablated By Femtosecond Laser In Different Media

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Effect of Femtosecond Laser Processing Parameters on the Ablation Microgrooves of RB-SiC Composites

Investigations on the ablation behavior of C/SiC under femtosecond laser

Ablation Threshold and Material Removal Mechanisms of SiC Processed by Femtosecond Laser

Investigation on the Laser Ablation of SiC Ceramics Using Micro‐raman Mapping Technique

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Laser Ablation of 6H-Sic Single Crystals and Spectral Characterization

Fabrication and functional characteristics of micro/nano structures on the RB-SiC surface through nanosecond pulsed laser irradiation

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Experimental study on femtosecond laser ablation of 4H-SiC substrate

Heterogeneous ablation behavior of SiCf/SiC composite by nanosecond pulse laser

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Influence of surface morphology on processing of C/SiC composites via femtosecond laser

Laser Ablation Behaviors of C/SiC Composites in Air

Investigation of the Morphology and Structural Transformation of 6H-Sic Induced by a Single Femtosecond Laser Pulse

Ablation Behavior of C/SiC with YSZ and ZrB2 Coatings under High-Energy Laser Irradiation

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate

The ablation behavior and modification mechanism of SiC under different laser energy