Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Fabrication and functional characteristics of micro/nano structures on the RB-SiC surface through nanosecond pulsed laser irradiation

On the surface characteristics and removability of RB-SiC composite processed by nanosecond pulsed laser

Improving Polishing Efficiency of RB-SiC through Femtosecond Laser Pretreatment

Hybrid micro/nano-structure formation by angular laser texturing of Si surface for surface enhanced Raman scattering.

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Femtosecond Laser Nanostructuring on a 4H-Sic Surface by Tailoring the Induced Self-Assembled Nanogratings

Effect of Femtosecond Laser Processing Parameters on the Ablation Microgrooves of RB-SiC Composites

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Fabricating physicochemical microstructures with super hydrophilicity on Cf/SiC composites surface via picosecond-laser induced ablation

Removal mechanism of SiC/SiC composites by underwater femtosecond laser ablation

Wetting behavior of Al on the surface of SiC textured by nanosecond laser

Controllable reduction of absorbance and two-step reaction for 3D-printed SiC ceramics with micron-level periodic structure

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Modifying single-crystal silicon and trimming silicon microring devices by femtosecond laser irradiation

Fabrication of highly homogeneous and controllable nanogratings on silicon via chemical etching-assisted femtosecond laser modification

A new method for machining RB-SiC with high efficiency and quality: Laser assisted ultrasonic grinding

Preform impregnation to optimize the properties and microstructure of RB-SiC prepared with laser sintering and reactive melt infiltration

High speed and low roughness micromachining of silicon carbide by plasma etching aided femtosecond laser processing

Femtosecond laser surface modification of 4H-SiC improves machinability