Abstract:SiC, as one typical 3rd generation semiconductor, has high potential to be used as the substrate for harsh environment sensors. However, the etching of this material is still challenging. Femtosecond laser has been demonstrated to have great potential in SiC etching, but the material removal mechanisms need further investigation. Herein, the two-temperature model considering carrier concentration is utilized to illustrate the microscopic mechanism of carrier concentration and temperature change in SiC caused by femtosecond laser irradiation. An 800 nm, 50 fs, 10 Hz Ti: sapphire femtosecond laser was used to process SiC in different media including air, HF and water. The ablation threshold of SiC in the three media is calculated. The highest ablation threshold (4.98 J/cm(2)) is obtained when the pulse number N = 50, in air. The lowest ablation threshold (0.53 J/cm(2)) is obtained when the pulse number N = 300, in HF. Results indicate that ablation threshold is strongly dependent on the laser pulse number and processing medium. Based on the cleavage phenomenon of SiC crystal structure observed by micro-nano characterization, the mechanism model of femtosecond laser-induced periodic structure of SiC surface based on material lattice cleavage is established, and the relationship between the intrinsic texture and the evolution of periodic structure of ablation surface is revealed. This will provide a new way to understand the ablation mechanism of femtosecond laser. In addition, the processing media has significant effect on surface roughness and chemical bond characteristics of SiC. Liquid processing media can reduce the surface roughness and avoid oxidation, which is helpful to manufacture SiC devices with specific surface requirements using femtosecond laser as an auxiliary method.

Investigation on the Laser Ablation of SiC Ceramics Using Micro‐raman Mapping Technique

Investigations on the ablation behavior of C/SiC under femtosecond laser

Revealing Damage Evolution and Ablation Behavior of SiC/SiC Ceramic Matrix Composites by Picosecond Laser High-Efficiency Ablation

Understanding Laser Ablating Mechanism of Cf/SiC Composites: Micro Heat Transfer and Subsurface Microstructure Transformation

Laser Ablation of 6H-Sic Single Crystals and Spectral Characterization

Study on Ablation Behavior and Mechanism of C/SiC Composite Irradiated by a Laser with Various Parameters

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Laser ablation of SiC/SiC ceramic matrix composites: Morphological characterization, component evolution and oxidation mechanisms

The ablation behavior and modification mechanism of SiC under different laser energy

Investigations on Continuous-Wave Laser and Pulsed Laser Induced Controllable Ablation of SiCf/SiC Composites

Microstructure evolution and ablation mechanism of SiCf/SiC ceramic matrix composite microgrooves processed by pico-second laser

Ablation Threshold and Material Removal Mechanisms of SiC Processed by Femtosecond Laser

Investigation of damage induced by high-power continuous wave laser on SiC-based film

Laser Ablation Behaviors of C/SiC Composites in Air

Crystal Cleavage, Periodic Nanostructure And Surface Modification Of Sic Ablated By Femtosecond Laser In Different Media

Ablation Behavior of C/SiC with YSZ and ZrB2 Coatings under High-Energy Laser Irradiation

High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Laser Ablation Behavior of RB-SiC by Femtosecond Laser Irradiation

Removal mechanism of SiC/SiC composites by underwater femtosecond laser ablation

Laser ablation behavior and mechanism of C/SiC composite