Ultralow Lattice Thermal Conductivity and High Thermoelectric Figure of Merit in Dually Substituted Cu12Sb4S13 Tetrahedrites

Chen Zhu,Hongwei Ming,Jian Zhang,Di Li,Tao Chen,Xiaoying Qin
DOI: https://doi.org/10.1002/aelm.202200110
IF: 6.2
2022-01-01
Advanced Electronic Materials
Abstract:The thermoelectric properties of dually substituted Cu12−xInxSb4S12.8Se0.2 tetrahedrites are studied in temperature range from 300 to 723 K. The results indicate that dual substitution of In for Cu and Se for S not only causes the enhancement of thermopower S but also gives rise to a significant decrease in lattice thermal conductivity κL. An ultralow κL ≈0.2 W m−1 K−1 is obtained at 723 K in Cu11.95In0.05Sb4S12.8Se0.2 sample due to the enhanced phonon scattering mainly by point defects. Consequently, a high figure of merit ZTmax ≈1.0 is achieved in Cu11.95In0.05Sb4S12.8Se0.2 sample, which is ≈56% larger than that of pristine Cu12Sb4S13, indicating that dual substitution is effective in boosting the thermoelectric properties of tetrahedrites.
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