Abstract:Cryogenic deep reactive ion etching (Cryo DRIE) of silicon has become an enticing but challenging process utilized in front-end fabrication for the semiconductor industry. This method, compared to the Bosch process, yields vertical etch profiles with smoother sidewalls not subjected to scalloping, which are desired for many microelectromechanical systems (MEMS) applications. Smoother sidewalls enhance electrical contact by ensuring more conformal and uniform sidewall coverage, thereby increasing the effective contact area without altering contact dimensions. The versatility of the Cryo DRIE process allows for customization of the etch profiles by adjusting key process parameters such as table temperature, O2 percentage of the total gas flow rate (O2 + SF6), RF bias power, and process pressure. In this work, we undertake a comprehensive study of the effects of Cryo DRIE process parameters on the trench profiles in the structures used to define cantilevers in MEMS devices. Experiments were performed with an Oxford PlasmaPro 100 Estrelas ICP-RIE system using positive photoresist SPR-955 as a mask material. Our findings demonstrate significant influences on the sidewall angle, etch rate, and trench shape due to these parameter modifications. Varying the table temperature between -80°C and -120°C under a constant process pressure of 10 mTorr changes the etch rate from 3 to 4 μm/min, while sidewall angle changes by ~2°, from positive ( 90° relative to the Si surface) tapering. Altering the O2 flow rate with constant SF6 flow results in a notable 10° shift in sidewall tapering. Furthermore, SPR-955 photoresist masks provide selectivity of 46:1 with respect to Si and facilitates the fabrication of MEMS devices with precise dimension control ranging from 1 to 100 μm for etching depths up to 42 μm using Cryo DRIE. Understanding the influence of each parameter is crucial for optimizing MEMS device fabrication.

Study on the Surface Roughness Improvement for Silicon Samples with Millimeter-Size Openings

Improvement on the Uniformity of Deep Reactive Ion Etch for Electrically Isolated Silicon-Based Substrates

Studies on the Surface Quality of the Unsteady-State Grinding Technique

Experimental Study on Roughness and Flatness of Micromirror Fabricated by Different Anisotropic Silicon Etching Processes

Study of anisotropic etching of (1 0 0) Si with ultrasonic agitation

Study on Silicon Deep Wet Etching Technology for MEMS

Characterization of Sidewall Roughness for Silicon Microstructures in Micro Actuator

Optimization of Etching Processes for the Fabrication of Smooth Silicon Carbide Membranes for Applications in Quantum Technology

Methods to Protect Silicon Microstructures from the Damages in Deep Reactive Ion Etching

Research on ultra-smooth machining technique for monocrystalline silicon substrate

Achievement of a near-perfect smooth silicon surface

Test Structures and Drie Topography for Bulk Silicon Mems Devices

Research on Surface Topography of Silicon Wafer in Chemical-mechanical Polishing

Oxide Or Metal Interface Damage Improvement Of Deep Silicon Etch Process By Low Power Rf Of Low Frequency

Bulk Micromachining Fabrication Platform Using the Integration of DRIE and Wet Anisotropic Etching

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Surface Quality Improvement of Atmospheric Pressure Plasma Polishing (appp) in Machining of Silicon Ultra-Smooth Surfaces

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Study on Controllable Wettability of Roughness Surfaces

Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon