Abstract:Cryogenic deep reactive ion etching (Cryo DRIE) of silicon has become an enticing but challenging process utilized in front-end fabrication for the semiconductor industry. This method, compared to the Bosch process, yields vertical etch profiles with smoother sidewalls not subjected to scalloping, which are desired for many microelectromechanical systems (MEMS) applications. Smoother sidewalls enhance electrical contact by ensuring more conformal and uniform sidewall coverage, thereby increasing the effective contact area without altering contact dimensions. The versatility of the Cryo DRIE process allows for customization of the etch profiles by adjusting key process parameters such as table temperature, O2 percentage of the total gas flow rate (O2 + SF6), RF bias power, and process pressure. In this work, we undertake a comprehensive study of the effects of Cryo DRIE process parameters on the trench profiles in the structures used to define cantilevers in MEMS devices. Experiments were performed with an Oxford PlasmaPro 100 Estrelas ICP-RIE system using positive photoresist SPR-955 as a mask material. Our findings demonstrate significant influences on the sidewall angle, etch rate, and trench shape due to these parameter modifications. Varying the table temperature between -80°C and -120°C under a constant process pressure of 10 mTorr changes the etch rate from 3 to 4 μm/min, while sidewall angle changes by ~2°, from positive ( 90° relative to the Si surface) tapering. Altering the O2 flow rate with constant SF6 flow results in a notable 10° shift in sidewall tapering. Furthermore, SPR-955 photoresist masks provide selectivity of 46:1 with respect to Si and facilitates the fabrication of MEMS devices with precise dimension control ranging from 1 to 100 μm for etching depths up to 42 μm using Cryo DRIE. Understanding the influence of each parameter is crucial for optimizing MEMS device fabrication.

Characterization of Sidewall Roughness for Silicon Microstructures in Micro Actuator

Study on the Surface Roughness Improvement for Silicon Samples with Millimeter-Size Openings

Evaluation on Ground Surface Accuracies of Large-Depth and Steeply Micro-Structured SiC Surfaces

Characterization of Line Edge Roughness and Line Width Roughness of Nano-Scale Typical Structures.

Rapid Measurement Of A High Step Microstructure With 90 Degrees Steep Sidewall

Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches

Analysis and Characterization of Line Edge Roughness of Nanostructures

Micromechanical Characterization of Polysilicon Films through On-Chip Tests

Fabrication process analysis for nano-positioning stage based on silicon bulk micromachining

Fabrication of a sidewall reflective optical switch by using FIB etching

Fabrication of Vertical Sidewalls by Anisotropic Etching of Silicon (100) Wafers

Experimental Study on Roughness and Flatness of Micromirror Fabricated by Different Anisotropic Silicon Etching Processes

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system

Improvement on the Uniformity of Deep Reactive Ion Etch for Electrically Isolated Silicon-Based Substrates

Key machining characteristics in ultrasonic vibration cutting of single crystal silicon for micro grooves

Methods to Protect Silicon Microstructures from the Damages in Deep Reactive Ion Etching

Research of Reducing Sidewall Roughness of SU-8 Microstructures

Test Structures and Drie Topography for Bulk Silicon Mems Devices

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Measurements and Modeling of Atomic-Scale Sidewall Roughness and Losses in Integrated Photonic Devices