Abstract:Silicon Carbide (SiC) is one of the most promising new-generation semiconductor material for high-power and high-efficiency electronic devices overcoming in some respects silicon mature performances. SiC substrates are more and more widely used in many semiconductor-based applications, like DC/AC converters. SiC-based MOSFET technology is nowadays applied in electric/hybrid vehicle power conversion systems. To further enhance the performance of SiC HV devices, trench-gate MOSFET design is preferred to planar-gate MOSFET structure. The trenches frame is defined by Reactive Ion Etching (RIE) by which high aspect ratio structures can be attained. Despite the fine-tuning of the etching process, some sidewall striations' undesired effects occur, degrading the performances of the devices. Accordingly, H 2 gas etching and sacrificial oxidation methods were adopted to recover the wall integrity, trying to restore the atomic roughness that characterizes the 4H–SiC. Since this problem interests vertically oriented trench sidewalls, a quantitative estimation of the roughness is difficult as Atomic Force Microscopy (AFM) measurements are always time-dispending and hard to manage: therefore, only a qualitative evaluation of the sidewall roughness can be accomplished by FIB/SEM micrographs. ImageJ software is herein used for a quantitative analysis starting from SEM images allowing a fast and repeatable quality assessment of trench striations before and after the recovery processes. The image analysis can produce numerical data regarding the status of the SiC trenches. In the present work, we will refer to the image analysis output value as Relative Roughness (RR). It represents the numerical data helpful to fulfill the study with a Design of Experiments (DOE) and Responsive Surface Method (RSM) aimed to optimize the post-etch recovery procedures.

Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system

Isotropic Etch for SiO2 Microcantilever Release with ICP System

0706 Uctile Cutting of a Microstructure Array on Silicon Surface by Using a Diamond Tool with a Negative Rake Angle

Controllable Diamond Cutting of Structured Surfaces with Subnanometric Height Features on Silicon

Rapid Measurement Of A High Step Microstructure With 90 Degrees Steep Sidewall

Evaluation on Ground Surface Accuracies of Large-Depth and Steeply Micro-Structured SiC Surfaces

Trench Profile Control of Silicon DRIE Process on ICP Tools

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Ductile Cutting of Silicon Microstructures with Surface Inclination Measurement and Compensation by Using A Force Sensor Integrated Single Point Diamond Tool

Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches

A process study of electron beam nano-lithography and deep etching with an ICP system

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Wafer level bulk titanium ICP etching using SU8 as an etching mask

Atomic Force Microscopy Deep Trench And Sidewall Imaging With An Optical Fiber Probe

A Parametric Study of ICP-RIE Etching on a Lithium Niobate Substrate

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts.

Improvement on the Uniformity of Deep Reactive Ion Etch for Electrically Isolated Silicon-Based Substrates

Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon

Influence of Etching Parameters on Sidewall Roughness of Silicon Based Waveguide Etched by Inductively Coupled Plasma

Improved Metal Assisted Chemical Etching Method for Uniform, Vertical and Deep Silicon Structure