Fabrication process analysis for nano-positioning stage based on silicon bulk micromachining

Jia-chou WANG,Wei-bin RONG,Xin-xin LI,Li-ning SUN
DOI: https://doi.org/10.3321/j.issn:1004-924X.2008.04.012
2008-01-01
Abstract:In order to realize the miniaturized nano-positioning stage, a novel 2-DOF Single Crystal Silicon (SCS) nano-positioning micro x-y stage with the function of displacement detection was successfully developed using silicon bulk machining. The fabrication process of the nano-positioning stage with high aspect ratio and big dimension was presented. The effects of Deep Reactive Ion Etching (DRIE) and the backside protecting under the etching silicon on the structure were analyzed. Some factors causing nano-position stage failure were identified, and several advices were provided for avoiding these failures. Moreover, an effective fabricating technique was proposed to fabricate a vertical sidewall piezoresistor in plane in this nano-positioning stage. By adjusting DRIE parameters, a backside window with high aspect ratio and big dimension for releasing the structure was etched and electrostatics comb structure of 2.5 μm wide and 50 μm thickness was successfully released. Experimental results show the nano-positioning stata with high aspect ratio has excellent performance in integrating displacement detection.
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