Abstract:This brief investigates the influence of a <inline-formula> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula>-shaped gate in extending the microwave performance of a thin GaN buffer AlGaN/GaN HEMT. A well-calibrated simulation deck based on the in-house fabricated thin GaN HEMT demonstrates better reliability when a <inline-formula> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula>-shaped gate is coupled with a thin GaN buffer. The sample has been investigated under different operating conditions with a specific focus on RF power performance. The modification in the gate architecture results in the enhancement of both the OFF-state breakdown characteristics and thermal reliability for continuous wave (CW) mode operation. The pulsed characteristics of <inline-formula> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula>-gate demonstrate a lower degree of current slump thereby improving the pulsed mode operation of the devices under test (DUT). This opens up the bottleneck for the GaN HEMT device to be operated at a higher voltage and exhibit higher power densities when benchmarked against their conventional counterparts all the while ensuring modest tradeoffs to the current and device gain metrics. The results presented point toward the possibility of further mitigating the dispersive trapping effects on the RF performance of a GaN HEMT by coupling a <inline-formula> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula>-shaped gate with a thin GaN buffer.

Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs

Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs

Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Study on the Gate-Terminated Field-Plates for GaN-Based HEMT

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Study on the Optimization of Off-State Breakdown Performance of P-Gan HEMTs

Breakdown Voltage Enhancement in GaN Channel and AlGaN Channel HEMTs Using Large Gate Metal Height

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

Effects of Gate Work Function on E-mode AlGaN/GaN HEMTs with Stack Gate Β-Ga2o3/p-gan Structure

Impacts of eliminating ungated access regions on DC and thermal performances of GaN-based MIS-HEMT

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Maximizing the performance of 650 V p-GaN gate HEMTs: Dynamic ron characterization and gate-drive design considerations