Fabrication of Si3N4/Cu Direct-Bonded Heterogeneous Interface Assisted by Laser Irradiation

Yanyu Song,Duo Liu,Guobiao Jin,Haitao Zhu,Naibin Chen,Shengpeng Hu,Xiaoguo Song,Jian Cao
DOI: https://doi.org/10.1016/j.jmst.2021.05.032
2022-01-01
Abstract:Joining of ceramic and metal is a key component in microelectronic device manufacturing, in which the integrity of bonded interface is critical in the performance and stability of the devices. Current methods with a problem of thick transition layer at the interface impeded heat flow, which degraded device service life seriously. Herein, we propose a laser-assisted bonding approach to join ceramic to metal directly without any intermediate material. By focusing the laser on the surface of beta-Si 3 N 4 ceramic, the Si microcrystalline layer with stacked alpha-Si 3 N 4 nanocrystals was prepared first. The face-centered cubic (fcc) Si and hexagonal close-packed (hcp) beta-Si 3 N 4 substrate take the coherent orientation relations of [0 01] fcc [0 0 01] hcp and (220) fcc ( 10 1 over bar 0 ) hcp . Then, the defect-free Si 3 N 4 /Cu bonded interface obtained by the reaction of the formed Si and Cu at elevated temperature in the 805 - 900 degrees C range for 30 min demonstrated a strong and stable joining of ceramic to metal. The introduction of the laser provides a novel approach to join ceramics to metals, and the ceramic/metal component is expected to be a new configuration for package substrate in high-power device applications. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
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