Abstract:Optical and photonic devices comprised of fused-silica glass portfolios play an important role in astronomical detections, which requires the bonding interfaces to own robust mechanical properties and less optical loss. Indirect bonding lowers the difficulty of the bonding process than direct bonding by introducing the non-negligible intermediate or transition layers introduced but will inversely diminish the optical properties. In this study, a transition-free indirect bonding (TFB) strategy was developed to realize glass bonding with hard-to-distinguished interfacial boundary. In the process, the oxygen plasma activation was applied to reconstruct the glass surface. Owing to the produced chemical sites with the plasma surface activation, multiple paths could be provided for surface and interface reactions than conventional indirect bonding method hydroxide-catalyzed bonding (HCB). These adequate reactions constructed a whole and uniform Si-O network crossing the bonding interfaces, which was free of transition boundary between the interface and bulk substrates. The uniform and non-transition interface performed higher bonding strength and excellent optical transmittance with less loss than HCB. Based on the TFB strategy, multilayer chips were combined together enabling a 3D multi-layer chip stacking with low transmittance loss and stable mechanical structure for state-of-the-art optical applications in astronomical detection, laser instruments, and optical sensors.

Fabrication of SiC/Si, SiC/SiO2, and SiC/glass Heterostructures Via VUV/O3 Activated Direct Bonding at Low Temperature

Mechanisms for low-temperature direct bonding of Si/Si and quartz/quartz via VUV/O3 activation

Research on Silicon-Glass Thermal Bonding with SiO2 Film Assist

Research on Silicon-Glass Direct Bonding at Room Temperature

Bonding of Glass-Based Microfluidic Chips at Low- or Room-Temperature in Routine Laboratory

Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

Low Temperature Au-In-Au Metallic Bonding and Its Application in the Fabrication of Vcsels

Transition-free indirect bonding towards 3D multi-layer glass stacking

Low-temperature Cu/SiO 2 hybrid bonding based on Ar/H 2 plasma and citric acid cooperative activation for multi-functional chip integration

Low Temperature Cu/SiO2 Hybrid Bonding with Protruding Copper Pads

Direct wafer bonding of Ga2O3–SiC at room temperature

Research on bubble-free Si/SiC hydrophilic bonding approach for high-quality Si-on-SiC fabrication

Study on the mechanism of glass-SiC-glass anodic bonding process

Bonding strength enhancement of low temperature sintered SiC power module by femtosecond laser induced micro/nanostructures

Low-Temperature Bonding for Heterogeneous Integration of Silicon Chips with Nanocrystalline Diamond Films

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

A two-step surface treatment for enhanced hydroxide-catalyzed glass bonding

Using in-situ conversed nano SiC to bond UHTC particles and construct anti-ablation coating

III-V/Si wafer bonding using transparent, conductive oxide interlayers

A novel method of anodic bonding

Low-Temperature Cu–Cu Direct Bonding Using Pillar–Concave Structure in Advanced 3-D Heterogeneous Integration