Abstract:Silicon (Si) chips of 5 mm × 5 mm were bonded directly to copper (Cu) substrates using solid-state process at 300 °C without using any die-attach materials. A static pressure of 6.9 MPa was applied. To deal with the large mismatch in coefficient of thermal expansion (CTE) between Si and Cu, graded circular micro-trenches were fabricated on the Cu substrates. The micro-trenches provide space for Cu material to move into during the bonding process where the Cu surface incurs plastic deformation to conform to Si bottom surface for intimate contact. The micro-trenches also help relax stresses on the bonding interface caused by the fact that Cu contracts significantly more than Si during cooling down. The results obtained are encouraging, implying that the concept of using micro-trenches work. Scanning electron microscopy (SEM) images on cross sections of bonded structures show that Si chips were well bonded to Cu substrates without voids or defects on the interface and without any cracks on Si chip. Shear test were performed on six samples. It turned out that, of all six samples, the Si chip fractured first and the entire Si bottom surface was stilled well bonded to the Cu substrate. The average breakage force of Si chips on six samples is 13.5 Kgf. The breakage force of the joint cannot be determined but is certainly higher than 13.5 Kgf, which is more than twice of the specification American Military Standard. The new chip bonding structure with solid-state process reported in this paper eliminates the use of die-attach materials and the thermal resistance associated with the die-attach. It also removes the operating temperature limit constrained by the melting temperature of die-attach materials. We except this new bonding structure design to be a valuable alternative to high power and high temperature devices.

Direct Bonding of Silicon Nitride to Copper Via Laser Surface Modification

Synergistically Enhanced Si3N4/Cu Heterostructure Bonding by Laser Surface Modification

Fabrication of Si3N4/Cu Direct-Bonded Heterogeneous Interface Assisted by Laser Irradiation

Copper Bonding Silicon Nitride Substrate Using Atmosphere Plasma Spray

Nanosecond laser-induced contact reactive brazing of Si3N4 ceramic to Al

Fabrication of AlN/Cu Composite Structure Via Laser Surface Metallization Assisted Direct Bonding Technology

Pressure-assisted direct bonding of copper to silicon nitride for high thermal conductivity and strong interfacial bonding strength

Nanosecond Laser-Induced Surface Modification to Strengthen Cu/Si3N4 AMB Joints

Femtosecond laser surface modification-based brazing of Si3N4 ceramics to 7A52 aluminum alloy

Low-temperature Bonding of Cu on Si3N4 Substrate by Using Ti/Cu Thin Films

Laser‐induced Metallization of Porous Si3N4 Ceramic and Its Brazing to TiAl Alloy

Laser-Induced Exothermic Bonding of SiCp/Al Composites with Nanostructured Al/Ni Energetic Interlayer

Low-Temperature Bonding for Heterogeneous Integration of Silicon Chips with Nanocrystalline Diamond Films

Single-crystalline LiNbO3 Integrated Onto Si-based Substrates Via Ar Plasma-Activated Low-Temperature Direct Bonding

Asymmetric Proton-Exchange-Enhanced Lithium Niobate and Silicon Low-Temperature Direct Bonding with an Ultrathin Heterogeneous Interface.

Mechanical and Heat Transfer Properties of AlN/Cu Joints Based on Nanosecond Laser-Induced Metallization

Solid-state bonding of silicon chips to copper substrates with graded circular micro-trenches

Laser-induced localized and maskless electrodeposition of micro-copper structure on silicon surface: Simulation and experimental study

Construction of Microstructures on the Cu Substrate Using Ultrafast Laser Processing to Enhance the Bonding Strength of Sintered Ag Nanoparticles

Quasi-direct Cu–Si 3 N 4 bonding using multi-layered active metal deposition for power-module substrate

Low Temperature Bonding of Metals by Deposition of Nanoparticles at the Interface