Quasi-direct Cu–Si 3 N 4 bonding using multi-layered active metal deposition for power-module substrate

Hiroaki Tatsumi,Seongjae Moon,Makoto Takahashi,Takahiro Kozawa,Eiki Tsushima,Hiroshi Nishikawa

DOI: https://doi.org/10.1016/j.matdes.2024.112637

IF: 9.417

2024-01-06

Materials & Design

Abstract:The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si 3 N 4 , are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing filler metals. This study introduces a quasi-direct Cu–Si 3 N 4 bonding technique using a Ti/Al bilayer active metal deposition at the bonding interface. A sputtered Ti/Al bilayer was formed on the Si 3 N 4 surface, then heated and pressurized the sputtered Si 3 N 4 substrate with Cu sheets in vacuum to bond each other without voids or delamination. The Ti/Al layers reacted with Si 3 N 4 and Cu, forming a 300 nm intermediate layer. TEM observations show this layer contains segregated Ti–N and Cu–Al phases, with a good lattice match to Si 3 N 4 and Cu–Al. Temperature-cycling tests on the Cu/Si 3 N 4 /Cu substrate revealed delamination caused by increased tensile stress at the periphery of the bonding area due to asymmetrical Cu patterns. This novel quasi-direct Cu–Si 3 N 4 bonding technique addresses issues of electrochemical migration and void formation seen in AMB substrates, offering a reliable bonding interface for power electronic substrates.

materials science, multidisciplinary