Abstract:The evolution of reaction phases formed in diffusion-bonded SiC/Ta–5W/SiC joints was investigated at a joining temperature of 1500–1700 °C for 10–90 min. The effects of bonding temperature and holding time on the phase evolution were found to be directly correlated with the thickness of the interfacial reaction layer when a 100-μm-thick Ta–5W interlayer was used for joining. In the case of a ~7-μm-thick reaction layer, the interfacial phase constitution consisted of a layered SiC/(Ta,W)C/(Ta,W)5Si3/(Ta,W)2Si/(Ta,W)xSiy/Ta–5W structure. In the reaction layer with a thickness of ~11–26 μm, the interfacial structure evolved into SiC/(Ta,W)C/(Ta,W)5Si3/(Ta,W)C/(Ta,W)xSiy/(Ta,W)2Si/(Ta,W)xSiy/Ta–5W, in which an additional (Ta,W)C/(Ta,W)xSiy layer was inserted between (Ta,W)5Si3 and (Ta,W)xSiy owing to the precipitation of carbon from the (Ta,W)5Si3 layer. When the Ta–5W interlayer was fully consumed to form a stable reaction product, namely the equilibrium state, (Ta,W)xSiy and (Ta,W)2Si were eventually transformed into (Ta,W)5Si3, and the final interface structure that was obtained was SiC/(Ta,W)C/(Ta,W)5Si3/(Ta,W)C/(Ta,W)5Si3/(Ta,W)C. This achievement will benefit the design, control, and characterization of SiC/metal interfaces.

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