Abstract:Among all available photovoltaic (PV) technology options, c-Si based passivated emitter rear cell (PERC) has already proved its mettle by delivering more than 22% conversion efficiency at the industrial level. However, designing of PERC solar cell device remains a challenge owing to recombination and absorption losses, which eventually restrict the performance of the device toward achieving an Auger efficiency limit of 29.4%. The primary contributor to these losses is emitter recombination losses that limits the performance of PERC devices. The n + -emitter region in the proposed PERC devices is formed using ion implantation followed by a diffusion process. The impact of process variables such as dose (cm−2), energy (keV), diffusion time (s), and diffusion temperature (oC) on the PERC device performance is not much explored. Therefore, in an attempt to fulfill this research gap, the emitter region performance in terms of ion implantation of phosphorus, influence of local back surface field (BSF) doping concentration (1017 to 1019 cm−3), and back surface recombination velocity (SRV 101–107 cm/s) on PERC device performance followed by the loss analysis is examined in this work. An upright pyramid textured structure with constant height (5 μm) and industrial standard stacked dielectric anti-reflective coating layers, SiNX/SiO2 and Al2O3/SiNX at front and back side respectively is realized using different process statements such as deposit, etch, implantation, and diffusion with the help of a Silvaco TCAD software. Investigations reveal that the PERC device can deliver an efficiency of 22.8% with 150 μm boron-doped crystalline silicon (c-Si) wafer at an optimum phosphorous dose (5 × 1015 cm−2), BSF doping (1019 cm−3), and SRVn (107 cm/s). Short-circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 0.686 V, and fill factor (FF) of 81.54% are obtained for the structure under consideration. A roadmap to achieve 23.5% conversion efficiency has also been reported by assuming a carrier selective contact at the backside with a surface recombination velocity of 10 cm/s.

Performance Improvement of Gallium‐Doped Passivated Emitter and Rear Cells by Two‐Step Bias Application

Improvement of Light Trapping in Bifacial PERC Silicon Solar Cells by Optimizing the Rear Surface Morphology

Pathway towards 24% efficiency for fully screen-printed passivated emitter and rear contact solar cells

Optimization of Rear-Side Passivation for Enhancing the Performance of Bifacial PERC+ Solar Cells

Light management of PERC solar cell with the front and back dielectric multilayers

Improved Bifacial Properties of P‐Type Passivated Emitter and Rear Cell Solar Cells toward High Mass Production Efficiency

Numerical study of mono-crystalline silicon solar cells with passivated emitter and rear contact configuration for the efficiency beyond 24% based on mass production technology

Grain Regrowth and Bifacial Passivation for High‐Efficiency Wide‐Bandgap Perovskite Solar Cells

Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

Power Conversion Efficiency Enhancement of Low-Bandgap Mixed Pb–Sn Perovskite Solar Cells by Improved Interfacial Charge Transfer

Manipulating the Migration of Iodine Ions via Reverse-Biasing for Boosting Photovoltaic Performance of Perovskite Solar Cells

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

Performance Improvement of Dye Sensitized Solar Cells by Using a Novel Operation Mode

Performance degradation of commercial Ga‐doped passivated emitter and rear cell solar modules in the field

Characterization of 23-percent efficient silicon solar cells

Synergy of Front‐Surface Energy‐Level Gradient and Lattice Anchoring Effect for Enhancing Perovskite Solar Cell Performance

Device Engineering of Perovskite Solar Cells to Achieve Near Ideal Efficiency

Dual Optimization of Bulk and Surface via Guanidine Halide for Efficient and Stable 2D/3D Hybrid Perovskite Solar Cells

Immediate and Temporal Enhancement of Power Conversion Efficiency in Surface-Passivated Perovskite Solar Cells