Abstract:This paper reports the surface metallization of Si3N4 ceramic substrate realized by thick film method. Silver paste containing a Bi2O3-B2O3-ZnO glass frit was sintered on Si3N4 ceramic surface to form a dense silver thick film. Upon increasing the sintering temperature from 450 ℃ to 600 ℃, the shear strength increased, and the electrical resistivity decreased. The silver thick film had a high shear strength of 23.35 MPa and a low resistivity of 3.41 μΩ∙cm when sintered at 600 ℃. Furthermore, the formation of the Bi2Si2O5 phase during sintering process enhanced the bonding between the silver thick film and Si3N4 ceramic substrate. The electrical resistivity and shear strength of silver film still exhibited good stability after 1000 thermal cycles. The experimental results suggest that thick film method is a promising technology to obtain high-quality surface metallization for Si3N4 ceramic substrate.

Effect of Sintering Temperature on the Properties of Silver Thick Film Metallization on Silicon Nitride Ceramic Substrate