Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Systematic Investigations on Doping Dependent Thermal Transport Properties of Single Crystal Silicon by Time-Domain Thermoreflectance Measurements

Characterizations on the Doping of Single-Crystal Silicon Carbide

Phonon scattering in doped silicon by molecular dynamics simulation

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Influence of Doping and Microstructure on Electrical Properties of Doped Silicon Thin Films

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Doping silicon nanocrystals with boron and phosphorus

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

Thermal conduction in ultrathin pure and doped single-crystal silicon layers at high temperatures

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers

Electronic and Mechanical Properties of Monocrystalline Silicon Doped with Trace Content of N or P: A First-Principles Study

The Role of Electron-Phonon Interaction in Heavily Doped Fine-Grained Bulk Silicons As Thermoelectric Materials

Combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si

Spectral Narrowing of Sub-Bandgap Absorbance and Emissivity in Highly Doped Silicon

Study of Structure and Temperature-Dependent Conductivity in N-Type Nc-Si:H Thin Films

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure